Overview
The STF19NM50N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is known for its high efficiency and low on-resistance, making it suitable for demanding high-efficiency converters. Available in TO-220FP, TO-220, and TO-247 packages, it combines a vertical structure with STMicroelectronics' strip layout to achieve one of the world's lowest on-resistance and gate charge values.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 500 | V |
| Gate-source voltage (VGS) | ±25 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 14 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 10 | A |
| Drain current (pulsed) (IDM) | 56 | A |
| Total dissipation at TC = 25 °C (PTOT) | 110 (TO-220FP), 30 (TO-247) | W |
| Peak diode recovery voltage slope (dv/dt) | 15 | V/ns |
| Insulation withstand voltage (VISO) | 2500 | V (RMS) |
| Storage temperature (Tstg) | -55 to 150 | °C |
| Max. operating junction temperature (Tj) | 150 | °C |
| Thermal resistance junction-case (Rthj-case) | 1.14 (TO-220FP), 4.17 (TO-247) | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 (TO-220FP), 50 (TO-247) | °C/W |
| Drain-source breakdown voltage (V(BR)DSS) | 500 | V |
| Gate threshold voltage (VGS(th)) | 2 to 4 | V |
| Static drain-source on-resistance (RDS(on)) | 0.2 to 0.25 | Ω |
| Total gate charge (Qg) | 34 | nC |
| Turn-on delay time (td(on)) | 12 | ns |
| Rise time (tr) | 16 | ns |
| Turn-off delay time (td(off)) | 61 | ns |
| Fall time (tf) | 17 | ns |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High efficiency due to low on-resistance and gate charge
- Available in TO-220FP, TO-220, and TO-247 packages
- ECOPACK® compliant for environmental sustainability
Applications
The STF19NM50N is particularly suited for high-efficiency switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Automotive and industrial power systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STF19NM50N?
The maximum drain-source voltage (VDS) is 500 V.
- What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?
The typical value is 0.2 Ω, and the maximum value is 0.25 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 14 A.
- What is the total gate charge (Qg) for this MOSFET?
The total gate charge (Qg) is 34 nC.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 12 ns, and the typical turn-off delay time (td(off)) is 61 ns.
- What is the maximum operating junction temperature (Tj)?
The maximum operating junction temperature (Tj) is 150 °C.
- What are the available package types for the STF19NM50N?
The available package types are TO-220FP, TO-220, and TO-247.
- Is the STF19NM50N environmentally compliant?
Yes, it is ECOPACK® compliant, meeting various environmental standards.
- What is the typical rise and fall time for this MOSFET?
The typical rise time (tr) is 16 ns, and the typical fall time (tf) is 17 ns.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is from 2 to 4 V.
