STF28NM50N
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STMicroelectronics STF28NM50N

Manufacturer No:
STF28NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 21A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF28NM50N is a revolutionary N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)500V
Gate-source voltage (VGS)± 25V
Continuous drain current (ID) at TC = 25 °C21A
Continuous drain current (ID) at TC = 100 °C13A
Pulsed drain current (IDM)84A
Total dissipation at TC = 25 °C150W
Static drain-source on-resistance (RDS(on))0.135 Ω (typ), 0.158 Ω (max)
Gate threshold voltage (VGS(th))2-4V
Turn-on delay time (td(on))13.6 ns (typ)ns
Rise time (tr)19 ns (typ)ns
Turn-off delay time (td(off))62 ns (typ)ns
Fall time (tf)52 ns (typ)ns

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in various packages: TO-220FP, TO-220, D²PAK, TO-247
  • ECOPACK® compliant for environmental sustainability

Applications

The STF28NM50N is designed for high-efficiency switching applications, making it ideal for use in power converters, motor control, and other high-power electronic systems where low on-resistance and high efficiency are critical.

Q & A

  1. What is the drain-source voltage rating of the STF28NM50N?
    The drain-source voltage (VDS) is rated at 500 V.
  2. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 21 A.
  3. What is the typical on-resistance of the STF28NM50N?
    The typical static drain-source on-resistance (RDS(on)) is 0.135 Ω.
  4. What are the available package types for the STF28NM50N?
    The device is available in TO-220FP, TO-220, D²PAK, and TO-247 packages.
  5. Is the STF28NM50N environmentally compliant?
    Yes, it is available in ECOPACK® compliant packages.
  6. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) ranges from 2 to 4 V.
  7. What is the typical turn-on delay time?
    The typical turn-on delay time (td(on)) is 13.6 ns.
  8. What are the typical rise and fall times?
    The typical rise time (tr) is 19 ns, and the typical fall time (tf) is 52 ns.
  9. What is the maximum pulsed drain current?
    The maximum pulsed drain current (IDM) is 84 A.
  10. What is the total dissipation at 25 °C?
    The total dissipation at TC = 25 °C is 150 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:158mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1735 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STW28NM50N
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MOSFET N-CH 500V 21A TO247-3
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STP28NM50N
MOSFET N-CH 500V 21A TO220AB
STB28NM50N
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Similar Products

Part Number STF28NM50N STF8NM50N STF21NM50N STF23NM50N STF25NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 5A (Tc) 18A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 158mOhm @ 10.5A, 10V 790mOhm @ 2.5A, 10V 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 14 nC @ 10 V 65 nC @ 10 V 45 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1735 pF @ 25 V 364 pF @ 50 V 1950 pF @ 25 V 1330 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 35W (Tc) 20W (Tc) 30W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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