Overview
The STF8NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. Available in DPAK and TO-220 packages, the STF8NM50N combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge values.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 500 | V |
| Gate-source voltage (VGS) | ±25 | V |
| Drain current (continuous) at Tcase = 25 °C (ID) | 5 | A |
| Drain current (continuous) at Tcase = 100 °C (ID) | 3 | A |
| Drain current (pulsed) (IDM) | 20 | A |
| Total dissipation at Tcase = 25 °C (PTOT) | 45 | W |
| Peak diode recovery voltage slope (dv/dt) | 15 | V/ns |
| Storage temperature range (Tstg) | -55 to 150 | °C |
| On-resistance (RDS(on)) | 0.73 Ω (typ.) | Ω |
| Total gate charge (Qg) | 14 nC | nC |
| Thermal resistance junction-case (Rthj-case) | 2.78 °C/W (DPAK), 2.5 °C/W (TO-220) | °C/W |
Key Features
- Low on-resistance (RDS(on)) of 0.73 Ω (typ.)
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- High-efficiency performance due to MDmesh™ II technology
- Available in DPAK and TO-220 packages
- ECOPACK® compliant for environmental sustainability
Applications
- Switching applications requiring high efficiency and low on-resistance
- High-power converters and power supplies
- Motor control and drive systems
- Power factor correction (PFC) circuits
- Other high-performance power management systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STF8NM50N?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STF8NM50N?
The typical on-resistance (RDS(on)) is 0.73 Ω.
- What are the package options available for the STF8NM50N?
The STF8NM50N is available in DPAK and TO-220 packages.
- What is the maximum continuous drain current (ID) at Tcase = 25 °C?
The maximum continuous drain current (ID) at Tcase = 25 °C is 5 A.
- What is the thermal resistance junction-case (Rthj-case) for the DPAK package?
The thermal resistance junction-case (Rthj-case) for the DPAK package is 2.78 °C/W.
- Is the STF8NM50N 100% avalanche tested?
- What technology is used in the STF8NM50N?
The STF8NM50N uses the second generation of MDmesh™ technology.
- What are some common applications for the STF8NM50N?
Common applications include switching applications, high-power converters, motor control, and power factor correction (PFC) circuits.
- Is the STF8NM50N environmentally compliant?
- What is the total gate charge (Qg) of the STF8NM50N?
The total gate charge (Qg) is 14 nC.
