STB28NM50N
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STMicroelectronics STB28NM50N

Manufacturer No:
STB28NM50N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 21A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB28NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device leverages ST's advanced STripFET F8 technology, which combines a vertical structure with a strip layout to achieve one of the world's lowest on-resistance and gate charge. This makes it an ideal choice for applications requiring high efficiency and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)800 V
ID (Drain Current)21 A (Tc)
PD (Power Dissipation)150 W (Tc)
RDS(on) (On-Resistance)Low on-resistance
PackageD2PAK (Surface Mount)
Avalanche Testing100% avalanche tested
Gate StructureEnhanced trench gate structure

Key Features

  • Utilizes ST's STripFET F8 technology for enhanced performance.
  • Low on-resistance and gate charge.
  • Zener-protected for added reliability.
  • 100% avalanche tested to ensure robustness.
  • Ideal for high-efficiency applications.

Applications

The STB28NM50N is particularly suited for various high-power applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Other high-efficiency power conversion circuits.

Q & A

  1. What is the drain-source voltage rating of the STB28NM50N?
    The drain-source voltage rating is 800 V.
  2. What is the maximum drain current for the STB28NM50N?
    The maximum drain current is 21 A (Tc).
  3. What is the power dissipation capability of the STB28NM50N?
    The power dissipation capability is 150 W (Tc).
  4. What technology does the STB28NM50N use?
    The STB28NM50N uses ST's STripFET F8 technology.
  5. Is the STB28NM50N Zener-protected?
    Yes, the STB28NM50N is Zener-protected.
  6. Has the STB28NM50N been avalanche tested?
    Yes, it has been 100% avalanche tested.
  7. What package type does the STB28NM50N come in?
    The STB28NM50N comes in a D2PAK (Surface Mount) package.
  8. What are some common applications for the STB28NM50N?
    Common applications include flyback converters and LED lighting systems.
  9. Why is the STB28NM50N considered high-performance?
    The STB28NM50N is considered high-performance due to its low on-resistance and gate charge, achieved through ST's advanced STripFET F8 technology.
  10. Where can I find detailed specifications for the STB28NM50N?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor sites like Mouser, Digi-Key, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:158mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1735 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STW28NM50N
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STP28NM50N
STP28NM50N
MOSFET N-CH 500V 21A TO220AB
STB28NM50N
STB28NM50N
MOSFET N-CH 500V 21A D2PAK

Similar Products

Part Number STB28NM50N STB21NM50N STB23NM50N STB25NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 18A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 158mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 65 nC @ 10 V 45 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1735 pF @ 25 V 1950 pF @ 25 V 1330 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150W (Tc) 140W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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