NVR5124PLT1G
  • Share:

onsemi NVR5124PLT1G

Manufacturer No:
NVR5124PLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVR5124PLT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This single P-channel MOSFET is packaged in a SOT-23 footprint, making it suitable for space-constrained designs. It is characterized by its enhancement mode operation and is qualified to the AEC-Q101 standard, ensuring reliability in automotive and other demanding environments.

Key Specifications

ParameterValue
Channel ModeEnhancement
Vds (Drain-Source Voltage)-60V
Id (Continuous Drain Current)-0.67A
Pd (Power Dissipation)470 mW
Tj (Junction Temperature)-55°C to +150°C
Vgs (Gate-Source Voltage)-20V to +12V
Qg (Total Gate Charge)4.3 nC
Package TypeSOT-23

Key Features

  • Enhancement mode P-channel MOSFET for efficient switching and low on-resistance.
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
  • Compact SOT-23 package suitable for space-constrained designs.
  • High maximum operating temperature of +150°C.
  • Low power dissipation of 470 mW.

Applications

The NVR5124PLT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management and switching circuits.
  • Power management: Ideal for DC-DC converters, voltage regulators, and power switches.
  • Consumer electronics: Used in battery management, power supply circuits, and other high-reliability applications.

Q & A

  1. What is the package type of the NVR5124PLT1G? The NVR5124PLT1G is packaged in a SOT-23 footprint.
  2. What is the maximum drain-source voltage (Vds) of the NVR5124PLT1G? The maximum drain-source voltage (Vds) is -60V.
  3. What is the continuous drain current (Id) of the NVR5124PLT1G? The continuous drain current (Id) is -0.67A.
  4. Is the NVR5124PLT1G qualified for automotive use? Yes, it is qualified to the AEC-Q101 standard.
  5. What is the maximum junction temperature (Tj) of the NVR5124PLT1G? The maximum junction temperature (Tj) is +150°C.
  6. What is the total gate charge (Qg) of the NVR5124PLT1G? The total gate charge (Qg) is 4.3 nC.
  7. What is the power dissipation (Pd) of the NVR5124PLT1G? The power dissipation (Pd) is 470 mW.
  8. In what types of applications is the NVR5124PLT1G commonly used? It is commonly used in automotive systems, power management, and consumer electronics.
  9. What is the channel mode of the NVR5124PLT1G? The channel mode is enhancement.
  10. What is the gate-source voltage (Vgs) range of the NVR5124PLT1G? The gate-source voltage (Vgs) range is -20V to +12V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:230mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):470mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.49
1,809

Please send RFQ , we will respond immediately.

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223