NVR5124PLT1G
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onsemi NVR5124PLT1G

Manufacturer No:
NVR5124PLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 1.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVR5124PLT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This single P-channel MOSFET is packaged in a SOT-23 footprint, making it suitable for space-constrained designs. It is characterized by its enhancement mode operation and is qualified to the AEC-Q101 standard, ensuring reliability in automotive and other demanding environments.

Key Specifications

ParameterValue
Channel ModeEnhancement
Vds (Drain-Source Voltage)-60V
Id (Continuous Drain Current)-0.67A
Pd (Power Dissipation)470 mW
Tj (Junction Temperature)-55°C to +150°C
Vgs (Gate-Source Voltage)-20V to +12V
Qg (Total Gate Charge)4.3 nC
Package TypeSOT-23

Key Features

  • Enhancement mode P-channel MOSFET for efficient switching and low on-resistance.
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
  • Compact SOT-23 package suitable for space-constrained designs.
  • High maximum operating temperature of +150°C.
  • Low power dissipation of 470 mW.

Applications

The NVR5124PLT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics such as power management and switching circuits.
  • Power management: Ideal for DC-DC converters, voltage regulators, and power switches.
  • Consumer electronics: Used in battery management, power supply circuits, and other high-reliability applications.

Q & A

  1. What is the package type of the NVR5124PLT1G? The NVR5124PLT1G is packaged in a SOT-23 footprint.
  2. What is the maximum drain-source voltage (Vds) of the NVR5124PLT1G? The maximum drain-source voltage (Vds) is -60V.
  3. What is the continuous drain current (Id) of the NVR5124PLT1G? The continuous drain current (Id) is -0.67A.
  4. Is the NVR5124PLT1G qualified for automotive use? Yes, it is qualified to the AEC-Q101 standard.
  5. What is the maximum junction temperature (Tj) of the NVR5124PLT1G? The maximum junction temperature (Tj) is +150°C.
  6. What is the total gate charge (Qg) of the NVR5124PLT1G? The total gate charge (Qg) is 4.3 nC.
  7. What is the power dissipation (Pd) of the NVR5124PLT1G? The power dissipation (Pd) is 470 mW.
  8. In what types of applications is the NVR5124PLT1G commonly used? It is commonly used in automotive systems, power management, and consumer electronics.
  9. What is the channel mode of the NVR5124PLT1G? The channel mode is enhancement.
  10. What is the gate-source voltage (Vgs) range of the NVR5124PLT1G? The gate-source voltage (Vgs) range is -20V to +12V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:230mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):470mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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