STW28NM50N
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STMicroelectronics STW28NM50N

Manufacturer No:
STW28NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 21A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW28NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is designed to offer one of the world’s lowest on-resistance and gate charge, making it highly suitable for demanding high-efficiency converters. Available in the TO-247 package, it combines a vertical structure with ST’s strip layout to achieve exceptional performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Gate-Source Voltage (VGS) ± 25 V
Continuous Drain Current (ID) at TC = 25 °C 21 A
Continuous Drain Current (ID) at TC = 100 °C 13 A
Pulsed Drain Current (IDM) 84 A
Total Dissipation at TC = 25 °C 150 W
Static Drain-Source On-Resistance (RDS(on)) 0.135 Ω (typ), 0.158 Ω (max)
Gate Threshold Voltage (VGS(th)) 2-4 V
Turn-on Delay Time (td(on)) 13.6 ns (typ) ns
Rise Time (tr) 19 ns (typ) ns
Turn-off Delay Time (td(off)) 62 ns (typ) ns
Fall Time (tf) 52 ns (typ) ns

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in TO-247 package
  • ECOPACK® compliant for environmental sustainability

Applications

  • Switching applications
  • High-efficiency converters
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW28NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the continuous drain current (ID) at TC = 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 21 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.135 Ω.

  4. What are the key features of the STW28NM50N?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  5. In which package is the STW28NM50N available?

    The STW28NM50N is available in the TO-247 package.

  6. What are the typical switching times for the STW28NM50N?

    The typical turn-on delay time is 13.6 ns, rise time is 19 ns, turn-off delay time is 62 ns, and fall time is 52 ns.

  7. Is the STW28NM50N environmentally compliant?

    Yes, it is ECOPACK® compliant, meeting environmental sustainability standards.

  8. What are some common applications of the STW28NM50N?

    Common applications include switching applications, high-efficiency converters, power supplies, DC-DC converters, motor control, and industrial and automotive power management systems.

  9. What is the maximum gate-source voltage (VGS) for the STW28NM50N?

    The maximum gate-source voltage (VGS) is ± 25 V.

  10. What is the total dissipation at TC = 25 °C for the STW28NM50N?

    The total dissipation at TC = 25 °C is 150 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:158mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1735 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STW28NM50N
STW28NM50N
MOSFET N-CH 500V 21A TO247-3
STP28NM50N
STP28NM50N
MOSFET N-CH 500V 21A TO220AB
STB28NM50N
STB28NM50N
MOSFET N-CH 500V 21A D2PAK

Similar Products

Part Number STW28NM50N STW21NM50N STW23NM50N STW25NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 18A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 158mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 65 nC @ 10 V 45 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1735 pF @ 25 V 1950 pF @ 25 V 1330 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150W (Tc) 140W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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