STW28NM50N
  • Share:

STMicroelectronics STW28NM50N

Manufacturer No:
STW28NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 21A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW28NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is designed to offer one of the world’s lowest on-resistance and gate charge, making it highly suitable for demanding high-efficiency converters. Available in the TO-247 package, it combines a vertical structure with ST’s strip layout to achieve exceptional performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Gate-Source Voltage (VGS) ± 25 V
Continuous Drain Current (ID) at TC = 25 °C 21 A
Continuous Drain Current (ID) at TC = 100 °C 13 A
Pulsed Drain Current (IDM) 84 A
Total Dissipation at TC = 25 °C 150 W
Static Drain-Source On-Resistance (RDS(on)) 0.135 Ω (typ), 0.158 Ω (max)
Gate Threshold Voltage (VGS(th)) 2-4 V
Turn-on Delay Time (td(on)) 13.6 ns (typ) ns
Rise Time (tr) 19 ns (typ) ns
Turn-off Delay Time (td(off)) 62 ns (typ) ns
Fall Time (tf) 52 ns (typ) ns

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • High efficiency due to low on-resistance and gate charge
  • Available in TO-247 package
  • ECOPACK® compliant for environmental sustainability

Applications

  • Switching applications
  • High-efficiency converters
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW28NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the continuous drain current (ID) at TC = 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 21 A.

  3. What is the typical static drain-source on-resistance (RDS(on))?

    The typical static drain-source on-resistance (RDS(on)) is 0.135 Ω.

  4. What are the key features of the STW28NM50N?

    The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.

  5. In which package is the STW28NM50N available?

    The STW28NM50N is available in the TO-247 package.

  6. What are the typical switching times for the STW28NM50N?

    The typical turn-on delay time is 13.6 ns, rise time is 19 ns, turn-off delay time is 62 ns, and fall time is 52 ns.

  7. Is the STW28NM50N environmentally compliant?

    Yes, it is ECOPACK® compliant, meeting environmental sustainability standards.

  8. What are some common applications of the STW28NM50N?

    Common applications include switching applications, high-efficiency converters, power supplies, DC-DC converters, motor control, and industrial and automotive power management systems.

  9. What is the maximum gate-source voltage (VGS) for the STW28NM50N?

    The maximum gate-source voltage (VGS) is ± 25 V.

  10. What is the total dissipation at TC = 25 °C for the STW28NM50N?

    The total dissipation at TC = 25 °C is 150 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:158mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1735 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.27
110

Please send RFQ , we will respond immediately.

Same Series
STW28NM50N
STW28NM50N
MOSFET N-CH 500V 21A TO247-3
STP28NM50N
STP28NM50N
MOSFET N-CH 500V 21A TO220AB
STB28NM50N
STB28NM50N
MOSFET N-CH 500V 21A D2PAK

Similar Products

Part Number STW28NM50N STW21NM50N STW23NM50N STW25NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 18A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 158mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V 190mOhm @ 8.5A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 65 nC @ 10 V 45 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1735 pF @ 25 V 1950 pF @ 25 V 1330 pF @ 50 V 2565 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150W (Tc) 140W (Tc) 125W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP