Overview
The STP14NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is available in the TO-220 package and is designed for high-efficiency converters and demanding switching applications. It combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge values, making it highly suitable for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 500 | V |
| Gate-source voltage (VGS) | ± 25 | V |
| Continuous drain current (ID) at TC = 25 °C | 12 | A |
| Continuous drain current (ID) at TC = 100 °C | 8 | A |
| Pulsed drain current (IDM) | 48 | A |
| Total dissipation at TC = 25 °C | 90 | W |
| Thermal resistance junction-case (Rthj-case) | 5 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 | °C/W |
| Static drain-source on-resistance (RDS(on)) | 0.28 (typ.), 0.32 (max.) | Ω |
| Gate threshold voltage (VGS(th)) | 2-4 | V |
| Avalanche current (IAR) | 4 | A |
| Single pulse avalanche energy (EAS) | 172 | mJ |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High efficiency due to low on-resistance and gate charge
- Available in TO-220, TO-220FP, and I²PAK packages
- ECOPACK® compliant for environmental sustainability
Applications
The STP14NM50N is particularly suited for high-efficiency switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Industrial automation and control systems
- Renewable energy systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STP14NM50N?
The maximum drain-source voltage (VDS) is 500 V. - What is the typical on-resistance (RDS(on)) of the STP14NM50N?
The typical on-resistance (RDS(on)) is 0.28 Ω. - What are the package options available for the STP14NM50N?
The device is available in TO-220, TO-220FP, and I²PAK packages. - What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 12 A. - What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?
The thermal resistance junction-case (Rthj-case) for the TO-220 package is 5 °C/W. - Is the STP14NM50N environmentally compliant?
Yes, the STP14NM50N is available in ECOPACK® compliant packages, which meet environmental sustainability standards. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2-4 V. - What is the single pulse avalanche energy (EAS) of the STP14NM50N?
The single pulse avalanche energy (EAS) is 172 mJ. - What are the typical applications of the STP14NM50N?
The STP14NM50N is typically used in high-efficiency switching applications such as power supplies, DC-DC converters, motor control, and industrial automation. - What is the maximum operating junction temperature (Tj) of the STP14NM50N?
The maximum operating junction temperature (Tj) is 150 °C.
