STP12NM50N
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STMicroelectronics STP12NM50N

Manufacturer No:
STP12NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 11A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP12NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STP12NM50 series, which utilizes ST's revolutionary MDmesh technology. This technology combines a multiple drain process with ST's PowerMESH horizontal layout, resulting in extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STP12NM50N is available in various packages, including D²PAK, TO-220, and TO-220FP, making it versatile for different application needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 500 V
VGS (Gate-Source Voltage) ±30 V
ID (Continuous Drain Current at TC = 25 °C) 12 A
ID (Continuous Drain Current at TC = 100 °C) 7.5 A
IDM (Pulsed Drain Current) 48 A
PTOT (Total Power Dissipation at TC = 25 °C) 160 (D²PAK), 35 (TO-220FP) W
RDS(on) (Static Drain-Source On-Resistance) 300 - 350 mΩ
TJ (Operating Junction Temperature Range) -65 to 150 °C
VISO (Insulation Withstand Voltage) 2.5 kV kV

Key Features

  • MDmesh technology for low on-resistance and high dv/dt
  • 100% avalanche tested for robustness
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Excellent avalanche characteristics
  • Available in D²PAK, TO-220, and TO-220FP packages
  • ECOPACK compliant for environmental sustainability

Applications

  • Switching applications
  • Flyback converters
  • LED lighting
  • High-power switching circuits
  • Power supplies and DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STP12NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?

    The typical value is 300 mΩ, and the maximum value is 350 mΩ.

  3. What is the continuous drain current at TC = 25 °C and TC = 100 °C?

    The continuous drain current is 12 A at TC = 25 °C and 7.5 A at TC = 100 °C.

  4. What is the total power dissipation at TC = 25 °C for different packages?

    The total power dissipation is 160 W for D²PAK and 35 W for TO-220FP.

  5. What is the operating junction temperature range of the STP12NM50N?

    The operating junction temperature range is -65 to 150 °C.

  6. What are the key features of the MDmesh technology used in the STP12NM50N?

    The MDmesh technology offers low on-resistance, high dv/dt, and excellent avalanche characteristics.

  7. In which packages is the STP12NM50N available?

    The STP12NM50N is available in D²PAK, TO-220, and TO-220FP packages.

  8. What are some common applications of the STP12NM50N?

    Common applications include switching applications, flyback converters, LED lighting, and high-power switching circuits.

  9. Is the STP12NM50N environmentally compliant?

    Yes, the STP12NM50N is available in ECOPACK compliant packages, which meet environmental sustainability standards.

  10. What is the peak diode recovery voltage slope (dv/dt) of the STP12NM50N?

    The peak diode recovery voltage slope (dv/dt) is 15 V/ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP12NM50N STP14NM50N STP19NM50N STP12NM60N STP13NM50N STP16NM50N STP10NM50N STP11NM50N STP12NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 600 V 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 12A (Tc) 14A (Tc) 10A (Tc) 12A (Tc) 15A (Tc) 7A (Tc) 8.5A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 250mOhm @ 7A, 10V 410mOhm @ 5A, 10V 320mOhm @ 6A, 10V 260mOhm @ 7.5A, 10V 630mOhm @ 3.5A, 10V 470mOhm @ 4.5A, 10V 350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 27 nC @ 10 V 34 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 38 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 50 V 816 pF @ 50 V 1000 pF @ 50 V 960 pF @ 50 V 960 pF @ 50 V 1200 pF @ 50 V 450 pF @ 50 V 547 pF @ 50 V 1000 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 100W (Tc) 90W (Tc) 110W (Tc) 90W (Tc) 100W (Tc) 125W (Tc) 70W (Tc) 70W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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