STP12NM50N
  • Share:

STMicroelectronics STP12NM50N

Manufacturer No:
STP12NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 11A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP12NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STP12NM50 series, which utilizes ST's revolutionary MDmesh technology. This technology combines a multiple drain process with ST's PowerMESH horizontal layout, resulting in extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STP12NM50N is available in various packages, including D²PAK, TO-220, and TO-220FP, making it versatile for different application needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 500 V
VGS (Gate-Source Voltage) ±30 V
ID (Continuous Drain Current at TC = 25 °C) 12 A
ID (Continuous Drain Current at TC = 100 °C) 7.5 A
IDM (Pulsed Drain Current) 48 A
PTOT (Total Power Dissipation at TC = 25 °C) 160 (D²PAK), 35 (TO-220FP) W
RDS(on) (Static Drain-Source On-Resistance) 300 - 350 mΩ
TJ (Operating Junction Temperature Range) -65 to 150 °C
VISO (Insulation Withstand Voltage) 2.5 kV kV

Key Features

  • MDmesh technology for low on-resistance and high dv/dt
  • 100% avalanche tested for robustness
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Excellent avalanche characteristics
  • Available in D²PAK, TO-220, and TO-220FP packages
  • ECOPACK compliant for environmental sustainability

Applications

  • Switching applications
  • Flyback converters
  • LED lighting
  • High-power switching circuits
  • Power supplies and DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STP12NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?

    The typical value is 300 mΩ, and the maximum value is 350 mΩ.

  3. What is the continuous drain current at TC = 25 °C and TC = 100 °C?

    The continuous drain current is 12 A at TC = 25 °C and 7.5 A at TC = 100 °C.

  4. What is the total power dissipation at TC = 25 °C for different packages?

    The total power dissipation is 160 W for D²PAK and 35 W for TO-220FP.

  5. What is the operating junction temperature range of the STP12NM50N?

    The operating junction temperature range is -65 to 150 °C.

  6. What are the key features of the MDmesh technology used in the STP12NM50N?

    The MDmesh technology offers low on-resistance, high dv/dt, and excellent avalanche characteristics.

  7. In which packages is the STP12NM50N available?

    The STP12NM50N is available in D²PAK, TO-220, and TO-220FP packages.

  8. What are some common applications of the STP12NM50N?

    Common applications include switching applications, flyback converters, LED lighting, and high-power switching circuits.

  9. Is the STP12NM50N environmentally compliant?

    Yes, the STP12NM50N is available in ECOPACK compliant packages, which meet environmental sustainability standards.

  10. What is the peak diode recovery voltage slope (dv/dt) of the STP12NM50N?

    The peak diode recovery voltage slope (dv/dt) is 15 V/ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:940 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
488

Please send RFQ , we will respond immediately.

Same Series
STF12NM50N
STF12NM50N
MOSFET N-CH 500V 11A TO220FP
STP12NM50N
STP12NM50N
MOSFET N-CH 500V 11A TO220AB
STB12NM50N
STB12NM50N
MOSFET N-CH 500V 11A D2PAK
STI12NM50N
STI12NM50N
MOSFET N-CH 500V 11A I2PAK

Similar Products

Part Number STP12NM50N STP14NM50N STP19NM50N STP12NM60N STP13NM50N STP16NM50N STP10NM50N STP11NM50N STP12NM50
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 600 V 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 12A (Tc) 14A (Tc) 10A (Tc) 12A (Tc) 15A (Tc) 7A (Tc) 8.5A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 250mOhm @ 7A, 10V 410mOhm @ 5A, 10V 320mOhm @ 6A, 10V 260mOhm @ 7.5A, 10V 630mOhm @ 3.5A, 10V 470mOhm @ 4.5A, 10V 350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 27 nC @ 10 V 34 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 38 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 940 pF @ 50 V 816 pF @ 50 V 1000 pF @ 50 V 960 pF @ 50 V 960 pF @ 50 V 1200 pF @ 50 V 450 pF @ 50 V 547 pF @ 50 V 1000 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 100W (Tc) 90W (Tc) 110W (Tc) 90W (Tc) 100W (Tc) 125W (Tc) 70W (Tc) 70W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VNQ830PEP-E
VNQ830PEP-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN