Overview
The STP12NM50 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their revolutionary MDmesh technology. This technology combines the multiple drain process with the company’s PowerMESH horizontal layout, resulting in outstanding low on-resistance, high dv/dt, and excellent avalanche characteristics. The MOSFET is available in a TO-220 package and is designed for high-performance applications requiring robust and efficient power handling.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Maximum Drain-Source Voltage) | 500 | V |
| VGS (Maximum Gate-Source Voltage) | 30 | V |
| VGS(th) (Gate-Threshold Voltage) | 5 | V |
| ID (Maximum Drain Current) | 12 | A |
| RDS(on) (Maximum Drain-Source On-State Resistance) | 300 mΩ (typ.) | mΩ |
| Pd (Maximum Power Dissipation) | 160 | W |
| Tj (Maximum Junction Temperature) | 150 | °C |
| Qg (Total Gate Charge) | 28 nC | nC |
| tr (Rise Time) | 10 ns | ns |
| Coss (Output Capacitance) | 250 pF | pF |
| Package | TO-220 |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Tight process control and high manufacturing yields
- Low gate input resistance
- RoHS compliant and available in Ecopack2 packaging
Applications
The STP12NM50 is suitable for various high-power switching applications, including:
- Switching power supplies
- Motor control and drive systems
- Industrial and automotive power conversion systems
- Data centers and solar microinverters
Q & A
- What is the maximum drain-source voltage of the STP12NM50?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance of the STP12NM50?
The typical on-resistance (RDS(on)) is 300 mΩ.
- What is the maximum drain current of the STP12NM50?
The maximum drain current (ID) is 12 A.
- What is the maximum junction temperature of the STP12NM50?
The maximum junction temperature (Tj) is 150 °C.
- What is the total gate charge of the STP12NM50?
The total gate charge (Qg) is 28 nC.
- What is the rise time of the STP12NM50?
The rise time (tr) is 10 ns.
- Is the STP12NM50 RoHS compliant?
- What are the typical applications of the STP12NM50?
The STP12NM50 is typically used in switching power supplies, motor control and drive systems, industrial and automotive power conversion systems, and data centers and solar microinverters.
- What technology is used in the STP12NM50?
The STP12NM50 uses STMicroelectronics' revolutionary MDmesh technology.
- What package types are available for the STP12NM50?
The STP12NM50 is available in TO-220 and TO-220FP packages.
