STP12NM50FP
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STMicroelectronics STP12NM50FP

Manufacturer No:
STP12NM50FP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 12A TO220FP
Delivery:
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Product Introduction

Overview

The STP12NM50FP is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh technology. This device is part of the STP12NM50 series and is available in the TO-220FP package. The MDmesh technology combines the multiple drain process with ST's PowerMESH horizontal layout, offering extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. This MOSFET is designed to provide superior dynamic performance, making it suitable for a variety of high-power switching applications.

Key Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage 500 V
RDS(on) max. On-resistance 350 mΩ
ID Drain current (continuous) at TC = 25 °C 12 A A
IDM Drain current pulsed 48 A A
PTOT Total power dissipation at TC = 25 °C 35 W W
VISO Insulation withstand voltage (RMS) from all three leads to external heat sink 2.5 kV kV
dV/dt Peak diode recovery voltage slope 15 V/ns V/ns
TJ Operating junction temperature range -65 to 150 °C °C
Tstg Storage temperature range -65 to 150 °C °C
Rthj-case Thermal resistance junction-case 3.57 °C/W °C/W
Rthj-a Thermal resistance junction-ambient 62.5 °C/W °C/W

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • Excellent avalanche characteristics
  • High dv/dt capability
  • Available in TO-220FP package for enhanced thermal performance
  • ECOPACK compliant for environmental sustainability

Applications

  • Switching applications
  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-power audio amplifiers
  • Industrial and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP12NM50FP?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance (RDS(on)) of the STP12NM50FP?

    The typical on-resistance (RDS(on)) is 300 mΩ.

  3. What is the continuous drain current (ID) at 25 °C for the STP12NM50FP?

    The continuous drain current (ID) at 25 °C is 12 A.

  4. What is the peak diode recovery voltage slope (dv/dt) of the STP12NM50FP?

    The peak diode recovery voltage slope (dv/dt) is 15 V/ns.

  5. What is the operating junction temperature range (TJ) for the STP12NM50FP?

    The operating junction temperature range (TJ) is -65 to 150 °C.

  6. What package type is the STP12NM50FP available in?

    The STP12NM50FP is available in the TO-220FP package.

  7. What are the key features of the MDmesh technology used in the STP12NM50FP?

    The MDmesh technology offers low input capacitance and gate charge, low gate input resistance, and excellent avalanche characteristics.

  8. What are some common applications for the STP12NM50FP?

    Common applications include switching applications, power supplies, motor control, high-power audio amplifiers, and industrial and automotive systems.

  9. Is the STP12NM50FP environmentally compliant?

    Yes, the STP12NM50FP is ECOPACK compliant, meeting environmental sustainability standards.

  10. What is the thermal resistance junction-case (Rthj-case) for the STP12NM50FP?

    The thermal resistance junction-case (Rthj-case) is 3.57 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP12NM50FP
STP12NM50FP
MOSFET N-CH 500V 12A TO220FP
STB12NM50T4
STB12NM50T4
MOSFET N-CH 550V 12A D2PAK

Similar Products

Part Number STP12NM50FP STP12NM50FD
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 6A, 10V 400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 50µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 1000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 160W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220
Package / Case TO-220-3 Full Pack TO-220-3

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