Overview
The STB12NM50T4 is an N-channel Power MOSFET developed by STMicroelectronics using their revolutionary MDmesh technology. This device is part of the MDmesh series, which combines the multiple drain process with ST's PowerMESH horizontal layout. The STB12NM50T4 offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics, making it superior in dynamic performance compared to similar products on the market.
Available in D²PAK, TO-220, and TO-220FP packages, this MOSFET is designed to meet various application needs with its robust and efficient design.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 500 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 300 - 350 | mΩ |
| ID (Drain Current, Continuous at TC = 25 °C) | 12 | A |
| ID (Drain Current, Continuous at TC = 100 °C) | 7.5 | A |
| IDM (Drain Current, Pulsed) | 48 | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 160 (D²PAK), 35 (TO-220FP) | W |
| VGS (Gate-Source Voltage) | ±30 | V |
| TJ (Operating Junction Temperature Range) | -65 to 150 | °C |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 500 | V |
| VGS(th) (Gate Threshold Voltage) | 3 - 5 | V |
Key Features
- Extremely low on-resistance (RDS(on)) of 300 - 350 mΩ.
- High dv/dt capability.
- Excellent avalanche characteristics.
- Low input capacitance and gate charge.
- Low gate input resistance.
- 100% avalanche tested.
- Available in D²PAK, TO-220, and TO-220FP packages.
- ECOPACK compliant for environmental sustainability.
Applications
The STB12NM50T4 is suitable for various switching applications due to its high performance and robust design. These include:
- Power switching in industrial and consumer electronics.
- Motor control and drive systems.
- Power supplies and DC-DC converters.
- Automotive systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB12NM50T4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STB12NM50T4?
The typical on-resistance (RDS(on)) is 300 - 350 mΩ.
- What are the available package types for the STB12NM50T4?
The STB12NM50T4 is available in D²PAK, TO-220, and TO-220FP packages.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 12 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 48 A.
- What is the operating junction temperature range (TJ)?
The operating junction temperature range (TJ) is -65 to 150 °C.
- What are the key features of the STB12NM50T4?
The key features include extremely low on-resistance, high dv/dt capability, excellent avalanche characteristics, low input capacitance and gate charge, and low gate input resistance.
- Is the STB12NM50T4 environmentally compliant?
Yes, the STB12NM50T4 is available in ECOPACK compliant packages, meeting various environmental standards.
- What are some typical applications of the STB12NM50T4?
Typical applications include power switching in industrial and consumer electronics, motor control and drive systems, power supplies, and automotive systems.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 3 - 5 V.
