Overview
The STP12NM50FD is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the FDmesh™ family, known for its fast switching capabilities and low on-resistance. The STP12NM50FD is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 12 | A |
| Pulsed Drain Current (IDM) | 40 | A |
| Static Drain-Source On-Resistance (RDS(on)) | < 0.32 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Total Gate Charge (Qg) | 38 nC (typ.) | nC |
| Thermal Resistance Junction-Case (Rthj-case) | 0.65 °C/W | °C/W |
| Operating Junction Temperature (Tj) | -65 to 150 | °C |
Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
- Intrinsic fast-recovery body diode
- ECOPACK® packages with lead-free second level interconnect
Applications
- Switching applications
- Bridge topologies, particularly ZVS phase-shift converters
- Flyback converters
- LED lighting
Q & A
- What is the maximum drain-source voltage of the STP12NM50FD?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current rating at 25 °C?
The continuous drain current (ID) at 25 °C is 12 A.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(th)) is between 3 to 5 V.
- What are the key features of the FDmesh™ technology?
The FDmesh™ technology offers high dv/dt and avalanche capabilities, low input capacitance and gate charge, and an intrinsic fast-recovery body diode.
- What types of applications is the STP12NM50FD suitable for?
The STP12NM50FD is suitable for switching applications, bridge topologies, flyback converters, and LED lighting.
- What is the thermal resistance junction-case (Rthj-case) of the TO-220 package?
The thermal resistance junction-case (Rthj-case) is 0.65 °C/W.
- Is the STP12NM50FD available in environmentally friendly packaging?
- What is the maximum operating junction temperature?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the typical total gate charge (Qg)?
The typical total gate charge (Qg) is 38 nC.
- How is the device protected against avalanche?
The device is 100% avalanche tested and has high avalanche capabilities.
