STF5N95K5
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STMicroelectronics STF5N95K5

Manufacturer No:
STF5N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 3.5A TO220FP
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STF5N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is packaged in a TO-220FP package and is known for its superior power density and high efficiency. It features a proprietary vertical structure that significantly reduces on-resistance and gate charge, making it ideal for applications requiring high performance and reliability.

Key Specifications

Parameter Value Unit
Order Code STF5N95K5
VDS (Maximum Drain-Source Voltage) 950 V
RDS(on) (Maximum Drain-Source On-State Resistance) 2.5 Ω
ID (Continuous Drain Current at TC = 25 °C) 3.5 A
PTOT (Total Power Dissipation at TC = 25 °C) 25 W
VGS (Maximum Gate-Source Voltage) ±30 V
TJ (Operating Junction Temperature Range) -55 to 150 °C
RthJC (Thermal Resistance, Junction-to-Case) 5 °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 62.5 °C/W
Qg (Total Gate Charge) 12.5 nC
td(on) (Turn-on Delay Time) 12 ns
tr (Rise Time) 16 ns
td(off) (Turn-off Delay Time) 32 ns
tf (Fall Time) 25 ns

Key Features

  • Industry’s lowest RDS(on) x area and best FoM (figure of merit).
  • Ultra-low gate charge, enhancing switching performance and efficiency.
  • 100% avalanche tested, ensuring robustness and reliability.
  • Zener-protected, providing additional protection against voltage spikes.
  • High voltage capability with VDS of 950 V.
  • High continuous drain current of 3.5 A at TC = 25 °C.
  • Lead-free and RoHS compliant, meeting environmental standards.

Applications

  • Switching applications, such as power supplies, motor control, and high-frequency switching circuits.
  • High-voltage power conversion systems.
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STF5N95K5 MOSFET?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance (RDS(on)) of the STF5N95K5?

    The typical on-resistance (RDS(on)) is 2.5 Ω.

  3. What is the continuous drain current (ID) at TC = 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 3.5 A.

  4. What is the total gate charge (Qg) of the STF5N95K5?

    The total gate charge (Qg) is 12.5 nC.

  5. What are the key features of the MDmesh K5 technology used in the STF5N95K5?

    The MDmesh K5 technology offers industry’s lowest RDS(on) x area, best FoM, ultra-low gate charge, and 100% avalanche testing.

  6. What is the operating junction temperature range of the STF5N95K5?

    The operating junction temperature range is -55 to 150 °C.

  7. What is the thermal resistance (RthJC) of the STF5N95K5?

    The thermal resistance (RthJC) is 5 °C/W.

  8. What are the typical switching times for the STF5N95K5?

    The typical turn-on delay time (td(on)) is 12 ns, rise time (tr) is 16 ns, turn-off delay time (td(off)) is 32 ns, and fall time (tf) is 25 ns.

  9. Is the STF5N95K5 MOSFET RoHS compliant?

    Yes, the STF5N95K5 is lead-free and RoHS compliant.

  10. What are the common applications for the STF5N95K5 MOSFET?

    Common applications include switching power supplies, motor control, and high-frequency switching circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF5N95K5 STF6N95K5 STF2N95K5 STF5N95K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 9A (Tc) 2A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V 1.25Ohm @ 3A, 10V 5Ohm @ 1A, 10V 3.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 13 nC @ 10 V 10 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 100 V 450 pF @ 100 V 105 pF @ 100 V 460 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 20W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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