STF6N95K5
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STMicroelectronics STF6N95K5

Manufacturer No:
STF6N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 9A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF6N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring superior power density and high efficiency. The STF6N95K5 is packaged in a TO-220FP package and is known for its industry-leading figure of merit (FoM) and avalanche ruggedness.

Key Specifications

Parameter Value Unit
Order Code STF6N95K5
VDS (Drain-Source Voltage) 950 V
RDS(on) (Static Drain-Source On-Resistance) 1.25 Ω
ID (Drain Current, Continuous at TC = 25°C) 9 A
PTOT (Total Dissipation at TC = 25°C) 25 W
VGS (Gate-Source Voltage) ±30 V
ID (Drain Current, Continuous at TC = 100°C) 6 A
IDM (Drain Current, Pulsed) 36 A
Tj (Operating Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C

Key Features

  • Industry’s lowest RDS(on) * area and best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ESD capability
  • High efficiency and superior power density due to MDmesh™ K5 technology

Applications

The STF6N95K5 is primarily used in switching applications where high voltage, low on-resistance, and high efficiency are critical. These applications include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-voltage switching circuits
  • Aerospace and industrial power systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF6N95K5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance (RDS(on)) of the STF6N95K5?

    The typical on-resistance (RDS(on)) is 1.25 Ω.

  3. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 9 A.

  4. What is the total dissipation (PTOT) at TC = 25°C?

    The total dissipation (PTOT) at TC = 25°C is 25 W.

  5. What is the operating junction temperature range of the STF6N95K5?

    The operating junction temperature range is -55 to 150°C.

  6. Is the STF6N95K5 Zener-protected?
  7. What technology is used in the STF6N95K5?

    The STF6N95K5 is designed using MDmesh™ K5 technology.

  8. What are the primary applications of the STF6N95K5?

    The primary applications include switching applications, power supplies, motor control, and high-voltage switching circuits.

  9. What is the package type of the STF6N95K5?

    The STF6N95K5 is packaged in a TO-220FP package.

  10. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±30 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF6N95K5 STF2N95K5 STF5N95K5 STF6N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 2A (Tc) 3.5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 3A, 10V 5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V 1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 10 nC @ 10 V 12.5 nC @ 10 V -
Vgs (Max) ±30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V 105 pF @ 100 V 220 pF @ 100 V -
FET Feature - - - -
Power Dissipation (Max) 25W (Tc) 20W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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