Overview
The STD5N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This MOSFET is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency. The device is packaged in a DPAK (TO-252) package and is Zener-protected, ensuring robust performance in various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 950 | V |
| RDS(on) (On-State Resistance) | 2.5 | Ω |
| ID (Drain Current, continuous at TC = 25°C) | 3.5 | A |
| ID (Drain Current, continuous at TC = 100°C) | 2.2 | A |
| IDM (Drain Current, pulsed) | 14 | A |
| PTOT (Total Power Dissipation at TC = 25°C) | 70 | W |
| VGS (Gate-Source Voltage) | ±30 | V |
| TJ (Operating Junction Temperature) | -55 to 150 | °C |
| Qg (Total Gate Charge) | 12.5 | nC |
| tr (Rise Time) | 16 | ns |
| Coss (Output Capacitance) | 17 | pF |
Key Features
- Industry’s lowest RDS(on) x area and best figure of merit (FOM).
- Ultra-low gate charge for high efficiency and fast switching times.
- 100% avalanche tested for robustness and reliability.
- Zener-protected for enhanced protection against voltage spikes.
- MDmesh K5 technology for superior power density and high efficiency.
Applications
The STD5N95K5 is suitable for various high-voltage switching applications, including:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Industrial and automotive systems requiring high power density and efficiency.
- High-frequency switching applications where low on-resistance and fast switching times are critical.
Q & A
- What is the maximum drain-source voltage of the STD5N95K5?
The maximum drain-source voltage (VDS) is 950 V.
- What is the typical on-state resistance (RDS(on)) of the STD5N95K5?
The typical on-state resistance (RDS(on)) is 2.5 Ω.
- What is the maximum continuous drain current at 25°C for the STD5N95K5?
The maximum continuous drain current (ID) at 25°C is 3.5 A.
- What is the total power dissipation of the STD5N95K5 at 25°C?
The total power dissipation (PTOT) at 25°C is 70 W.
- What is the maximum gate-source voltage for the STD5N95K5?
The maximum gate-source voltage (VGS) is ±30 V.
- What technology is used in the STD5N95K5?
The STD5N95K5 uses the MDmesh K5 technology.
- What is the package type of the STD5N95K5?
The STD5N95K5 is packaged in a DPAK (TO-252) package.
- Is the STD5N95K5 Zener-protected?
Yes, the STD5N95K5 is Zener-protected.
- What are the typical rise and fall times of the STD5N95K5?
The typical rise time (tr) is 16 ns, and the typical fall time (tf) is 25 ns.
- What is the output capacitance (Coss) of the STD5N95K5?
The output capacitance (Coss) is 17 pF.
