Overview
The STD6N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This device is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency. The STD6N95K5 is packaged in a DPAK (TO-252) package and is suitable for various high-voltage switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STD6N95K5 | |
| VDS (Drain-Source Voltage) | 950 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 1.25 Ω (typ.) | Ω |
| ID (Drain Current, continuous at TC = 25 °C) | 9 A | A |
| ID (Drain Current, continuous at TC = 100 °C) | 6 A | A |
| IDM (Drain Current, pulsed) | 24 A | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 90 W | W |
| Tstg (Storage Temperature Range) | -55 to 150 °C | °C |
| TJ (Operating Junction Temperature Range) | -55 to 150 °C | °C |
| VGS (Gate-Source Voltage) | ±30 V | V |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 950 V | V |
| Qg (Total Gate Charge) | 9.6 nC (typ.) | nC |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.39 °C/W | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 50 °C/W | °C/W |
Key Features
- Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
- Industry’s best Figure of Merit (FoM) for superior performance.
- Ultra-low gate charge for fast switching times and reduced power losses.
- 100% avalanche tested to ensure robustness and reliability.
- Zener-protected gate to enhance durability.
Applications
- Switching applications, including power supplies, motor drives, and high-voltage DC-DC converters.
- High-efficiency power management systems requiring low on-resistance and fast switching times.
- Industrial and automotive applications where high reliability and robustness are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD6N95K5?
The maximum drain-source voltage (VDS) is 950 V.
- What is the typical on-resistance (RDS(on)) of the STD6N95K5?
The typical on-resistance (RDS(on)) is 1.25 Ω.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 9 A.
- What is the total gate charge (Qg) of the STD6N95K5?
The total gate charge (Qg) is 9.6 nC (typ.).
- What is the thermal resistance (RthJC) from junction to case?
The thermal resistance (RthJC) from junction to case is 1.39 °C/W.
- What are the key features of the MDmesh K5 technology used in the STD6N95K5?
The MDmesh K5 technology offers the industry’s lowest RDS(on) x area, best FoM, ultra-low gate charge, and 100% avalanche testing.
- What type of package is the STD6N95K5 available in?
The STD6N95K5 is available in a DPAK (TO-252) package.
- What are the typical applications for the STD6N95K5?
The STD6N95K5 is typically used in switching applications, high-efficiency power management systems, and industrial/automotive applications.
- What is the storage temperature range for the STD6N95K5?
The storage temperature range is -55 to 150 °C.
- Is the STD6N95K5 Zener-protected?
