STW6N95K5
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STMicroelectronics STW6N95K5

Manufacturer No:
STW6N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 9A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW6N95K5 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, which significantly reduces on-resistance and gate charge, making it ideal for applications requiring high power density and efficiency.

This MOSFET is part of a family of devices that include the STD6N95K5, STF6N95K5, STP6N95K5, and STU6N95K5, each available in different packages such as TO-220, TO-220FP, TO-247, DPAK, and IPAK. The STW6N95K5 specifically comes in the TO-247 package.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBR(DSS)) 950 V
Static Drain-Source On-Resistance (RDS(on)) < 1.25 Ω
Continuous Drain Current (ID) at TC = 25°C 9 A
Pulsed Drain Current (IDM) 36 A
Total Dissipation at TC = 25°C (PTOT) 90 W
Gate-Source Voltage (VGS) ± 30 V
Gate Threshold Voltage (VGS(th)) 3 - 5 V

Key Features

  • Worldwide best RDS(on) in DPAK package
  • Worldwide best Figure of Merit (FOM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected to enhance ESD capability and absorb voltage transients

Applications

The STW6N95K5 is designed for various high-voltage switching applications where high power density and efficiency are crucial. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial and automotive systems
  • High-frequency switching applications

Q & A

  1. What is the drain-source breakdown voltage of the STW6N95K5?

    The drain-source breakdown voltage (VBR(DSS)) is 950 V.

  2. What is the typical on-resistance of the STW6N95K5?

    The static drain-source on-resistance (RDS(on)) is less than 1.25 Ω.

  3. What is the maximum continuous drain current of the STW6N95K5 at 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 9 A.

  4. What is the total dissipation power of the STW6N95K5 at 25°C?

    The total dissipation power (PTOT) at TC = 25°C is 90 W.

  5. What is the gate-source voltage range for the STW6N95K5?

    The gate-source voltage (VGS) range is ± 30 V.

  6. Is the STW6N95K5 protected against voltage transients?

    Yes, the STW6N95K5 is Zener-protected to enhance ESD capability and absorb voltage transients.

  7. What are the typical applications for the STW6N95K5?

    The STW6N95K5 is used in high-voltage switching applications such as power supplies, motor control, industrial and automotive systems, and high-frequency switching applications.

  8. What package type is the STW6N95K5 available in?

    The STW6N95K5 is available in the TO-247 package.

  9. Does the STW6N95K5 have any special environmental compliance?

    Yes, the STW6N95K5 is available in ECOPACK® packages, which meet various environmental compliance standards.

  10. What is the gate threshold voltage range for the STW6N95K5?

    The gate threshold voltage (VGS(th)) range is 3 - 5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STU6N95K5
STU6N95K5
MOSFET N-CH 950V 9A IPAK
STP6N95K5
STP6N95K5
MOSFET N-CH 950V 9A TO220-3
STW6N95K5
STW6N95K5
MOSFET N-CH 950V 9A TO247-3

Similar Products

Part Number STW6N95K5 STW6N90K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 3A, 10V 1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 90W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247
Package / Case TO-247-3 TO-247-3

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