STP6N95K5
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STMicroelectronics STP6N95K5

Manufacturer No:
STP6N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 9A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The STP6N95K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications that require superior power density and high efficiency.

This MOSFET is available in various packages, including TO-220, TO-220FP, TO-247, and IPAK, catering to different design and application needs. The device is 100% avalanche tested and features built-in Zener-protected gates to enhance ESD performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 950 V
Static Drain-Source On-Resistance (RDS(on)) < 1.25 Ω
Drain Current (ID) 9 A
Total Dissipation (PTOT) 90 W
Gate-Source Voltage (VGS) ±30 V
Operating Junction Temperature (Tj) -55 to 150 °C
Thermal Resistance Junction-Case (Rthj-case) 1.39 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Total Gate Charge (Qg) 13 nC

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best Figure of Merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected gate for enhanced ESD performance

Applications

The STP6N95K5 is particularly suited for switching applications that require high power density and efficiency. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-voltage DC-DC converters
  • Industrial and automotive systems

Q & A

  1. What is the maximum drain-source voltage of the STP6N95K5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance of the STP6N95K5?

    The typical static drain-source on-resistance (RDS(on)) is less than 1.25 Ω.

  3. What is the maximum continuous drain current of the STP6N95K5 at 25°C?

    The maximum continuous drain current (ID) at 25°C is 9 A.

  4. What is the total power dissipation of the STP6N95K5?

    The total power dissipation (PTOT) is 90 W.

  5. What are the operating temperature ranges for the STP6N95K5?

    The operating junction temperature range is -55 to 150°C.

  6. Is the STP6N95K5 Zener-protected?
  7. What are the available packages for the STP6N95K5?

    The STP6N95K5 is available in TO-220, TO-220FP, TO-247, and IPAK packages.

  8. What is the thermal resistance junction-case for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 1.39 °C/W.

  9. What is the total gate charge of the STP6N95K5?

    The total gate charge (Qg) is 13 nC.

  10. Is the STP6N95K5 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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In Stock

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Same Series
STU6N95K5
STU6N95K5
MOSFET N-CH 950V 9A IPAK
STD6N95K5
STD6N95K5
MOSFET N-CH 950V 9A DPAK
STP6N95K5
STP6N95K5
MOSFET N-CH 950V 9A TO220-3

Similar Products

Part Number STP6N95K5 STP5N95K5 STP6N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 3.5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 3A, 10V 2.5Ohm @ 1.5A, 10V 1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 12.5 nC @ 10 V -
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V 220 pF @ 100 V -
FET Feature - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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