STP6N95K5
  • Share:

STMicroelectronics STP6N95K5

Manufacturer No:
STP6N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 9A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP6N95K5 is a very high voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure results in a dramatic reduction in on-resistance and ultra-low gate charge, making it ideal for applications that require superior power density and high efficiency.

This MOSFET is available in various packages, including TO-220, TO-220FP, TO-247, and IPAK, catering to different design and application needs. The device is 100% avalanche tested and features built-in Zener-protected gates to enhance ESD performance.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 950 V
Static Drain-Source On-Resistance (RDS(on)) < 1.25 Ω
Drain Current (ID) 9 A
Total Dissipation (PTOT) 90 W
Gate-Source Voltage (VGS) ±30 V
Operating Junction Temperature (Tj) -55 to 150 °C
Thermal Resistance Junction-Case (Rthj-case) 1.39 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Total Gate Charge (Qg) 13 nC

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best Figure of Merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected gate for enhanced ESD performance

Applications

The STP6N95K5 is particularly suited for switching applications that require high power density and efficiency. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-voltage DC-DC converters
  • Industrial and automotive systems

Q & A

  1. What is the maximum drain-source voltage of the STP6N95K5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance of the STP6N95K5?

    The typical static drain-source on-resistance (RDS(on)) is less than 1.25 Ω.

  3. What is the maximum continuous drain current of the STP6N95K5 at 25°C?

    The maximum continuous drain current (ID) at 25°C is 9 A.

  4. What is the total power dissipation of the STP6N95K5?

    The total power dissipation (PTOT) is 90 W.

  5. What are the operating temperature ranges for the STP6N95K5?

    The operating junction temperature range is -55 to 150°C.

  6. Is the STP6N95K5 Zener-protected?
  7. What are the available packages for the STP6N95K5?

    The STP6N95K5 is available in TO-220, TO-220FP, TO-247, and IPAK packages.

  8. What is the thermal resistance junction-case for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 1.39 °C/W.

  9. What is the total gate charge of the STP6N95K5?

    The total gate charge (Qg) is 13 nC.

  10. Is the STP6N95K5 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.58
290

Please send RFQ , we will respond immediately.

Same Series
STU6N95K5
STU6N95K5
MOSFET N-CH 950V 9A IPAK
STP6N95K5
STP6N95K5
MOSFET N-CH 950V 9A TO220-3
STW6N95K5
STW6N95K5
MOSFET N-CH 950V 9A TO247-3

Similar Products

Part Number STP6N95K5 STP5N95K5 STP6N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 3.5A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 3A, 10V 2.5Ohm @ 1.5A, 10V 1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 12.5 nC @ 10 V -
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 100 V 220 pF @ 100 V -
FET Feature - - -
Power Dissipation (Max) 90W (Tc) 70W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN