NTD2955T4G
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onsemi NTD2955T4G

Manufacturer No:
NTD2955T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD2955T4G is a P-Channel Power MOSFET produced by onsemi, designed for high-performance and reliability in various power management applications. This device is part of the TrenchFET® family, known for its advanced trench technology that enhances switching speed and reduces on-state resistance. The NTD2955T4G is particularly suited for low-voltage, high-speed switching applications, including power supplies, converters, and power motor controls.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS -60 -67 Vdc
Gate Threshold Voltage VGS(th) -2.0 -4.5 Vdc
Static Drain-Source On-State Resistance RDS(on) 0.155 0.180 Ω
Drain-Source On-Voltage VDS(on) -1.86 -2.6 Vdc
Turn-On Delay Time td(on) 10 20 ns
Turn-Off Delay Time td(off) 26 40 ns
Gate Charge QT 15 30 nC
Maximum Drain Current ID -12 A

Key Features

  • Avalanche Energy Specified: Designed to withstand high energy in avalanche and commutation modes.
  • IDSS and VDS(on) Specified at Elevated Temperature: Ensures reliable operation over a wide temperature range.
  • Low-Voltage, High-Speed Switching: Ideal for applications requiring fast switching times and low on-state resistance.
  • NVD and SVD Prefix for Automotive and Other Applications: Meets unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-Free and RoHS Compliant: Environmentally friendly packaging.
  • 100% UIS Tested: Ensures robustness and reliability in use.

Applications

  • Power Supplies: Suitable for high-efficiency power supply designs.
  • Converters: Used in DC-DC converters and other power conversion applications.
  • Power Motor Controls: Ideal for motor control circuits requiring high-speed switching.
  • Bridge Circuits: Well-suited for bridge configurations where diode speed and commutating safe operating areas are critical.
  • Load Switch: Can be used as a load switch in various power management systems.

Q & A

  1. What is the maximum drain-to-source breakdown voltage of the NTD2955T4G? The maximum drain-to-source breakdown voltage is -67 Vdc.
  2. What is the typical on-state resistance of the NTD2955T4G? The typical on-state resistance is 0.180 Ω.
  3. What are the typical turn-on and turn-off delay times? The typical turn-on delay time is 20 ns, and the typical turn-off delay time is 40 ns.
  4. Is the NTD2955T4G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  5. What is the maximum drain current of the NTD2955T4G? The maximum drain current is -12 A.
  6. Is the NTD2955T4G environmentally friendly? Yes, it is Pb-Free and RoHS compliant.
  7. What type of package does the NTD2955T4G come in? It comes in a DPAK package.
  8. What are some common applications of the NTD2955T4G? Common applications include power supplies, converters, power motor controls, and bridge circuits.
  9. Does the NTD2955T4G undergo any special testing? Yes, it is 100% UIS tested to ensure robustness and reliability.
  10. What is the gate charge of the NTD2955T4G? The gate charge is typically 30 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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NTD2955PT4G
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Similar Products

Part Number NTD2955T4G NTD2955PT4G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 10V 180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V 750 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 55W (Tj) 55W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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