SVD2955T4G
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onsemi SVD2955T4G

Manufacturer No:
SVD2955T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SVD2955T4G is a P-Channel Power MOSFET manufactured by onsemi. This device is part of the TrenchFET® family, known for its high performance and reliability in various power management applications. The SVD2955T4G is designed to withstand high energy in avalanche and commutation modes, making it suitable for low-voltage, high-speed switching applications. It features a robust design with a drain-to-source voltage rating of 60V and a continuous drain current of 12A, making it ideal for use in power supplies, converters, and motor controls.

Key Specifications

Parameter Description Value Unit
Drain-to-Source Voltage (Vds) Maximum drain-to-source voltage 60 V
Continuous Drain Current (Id) Maximum continuous drain current at TJ = 25°C 12 A
Pulsed Drain Current (Idm) Maximum pulsed drain current 18 A
Gate-Source Voltage (Vgs) Maximum gate-source voltage ±20 V
On-Resistance (Rds(on)) Typical on-resistance at Vgs = 10V, Id = 6A 180 mΩ Ω
Gate Threshold Voltage (Vgs(th)) Gate threshold voltage at Id = 250 μA 4 V
Maximum Power Dissipation (Pd) Maximum power dissipation at TJ = 25°C 55 W
Operating Junction and Storage Temperature Range Operating and storage temperature range -55 to 175 °C
Package Package type TO-252-2 (DPAK)

Key Features

  • TrenchFET® Power MOSFET: High performance and reliability in power management applications.
  • 100% UIS Tested: Ensures robustness against unexpected voltage transients.
  • Low-Voltage, High-Speed Switching: Suitable for applications in power supplies, converters, and motor controls.
  • Avalanche and Commutation Mode Capability: Designed to withstand high energy in these modes.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • AECQ101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

  • Power Supplies: Ideal for use in DC-DC converters and other power supply applications.
  • Converters: Suitable for use in various types of converters, including buck, boost, and buck-boost converters.
  • Motor Controls: Used in motor drive applications where high current and low on-resistance are critical.
  • Load Switches: Can be used as load switches in various electronic systems.
  • Bridge Circuits: Particularly well-suited for bridge circuits where diode speed and safe operating areas are critical.

Q & A

  1. What is the maximum drain-to-source voltage of the SVD2955T4G MOSFET?

    The maximum drain-to-source voltage is 60V.

  2. What is the continuous drain current rating of the SVD2955T4G at TJ = 25°C?

    The continuous drain current rating is 12A.

  3. What is the typical on-resistance of the SVD2955T4G at Vgs = 10V and Id = 6A?

    The typical on-resistance is 180 mΩ.

  4. What is the gate threshold voltage of the SVD2955T4G?

    The gate threshold voltage is 4V at Id = 250 μA.

  5. What is the maximum power dissipation of the SVD2955T4G at TJ = 25°C?

    The maximum power dissipation is 55W.

  6. What is the operating junction and storage temperature range of the SVD2955T4G?

    The operating junction and storage temperature range is -55 to 175°C.

  7. What package type is the SVD2955T4G available in?

    The SVD2955T4G is available in the TO-252-2 (DPAK) package.

  8. Is the SVD2955T4G Pb-Free and RoHS Compliant?

    Yes, the SVD2955T4G is Pb-Free and RoHS Compliant.

  9. What are some common applications of the SVD2955T4G MOSFET?

    Common applications include power supplies, converters, motor controls, load switches, and bridge circuits.

  10. Is the SVD2955T4G suitable for automotive applications?

    Yes, it is AECQ101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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