Overview
The NTD2955G is a P-Channel Power MOSFET produced by onsemi, designed for low-voltage, high-speed switching applications. This device is particularly suited for use in power supplies, converters, and power motor controls. It is notable for its ability to withstand high energy in avalanche and commutation modes, making it ideal for bridge circuits where diode speed and commutating safe operating areas are critical. The NTD2955G also offers an additional safety margin against unexpected voltage transients and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -60 | - | -67 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | - | ±25 | Vdc |
| Drain Current - Continuous | ID | -12 | - | -18 | Adc |
| Total Power Dissipation @ Ta = 25°C | PD | - | - | 55 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | - | - | °C |
| Static Drain-Source On-State Resistance | RDS(on) | - | 0.155 | 0.180 | Ω |
| Drain-to-Source On-Voltage | VDS(on) | -1.86 | - | -2.6 | Vdc |
| Turn-On Delay Time | td(on) | 10 | - | 20 | ns |
| Turn-Off Delay Time | td(off) | 26 | - | 40 | ns |
Key Features
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Designed for Low-Voltage, High-Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
- NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
- Automotive and Other Demanding Applications
Q & A
- What is the maximum drain-to-source voltage of the NTD2955G MOSFET?
The maximum drain-to-source voltage (VDS) is -60 Vdc.
- What is the continuous drain current rating of the NTD2955G?
The continuous drain current (ID) is -12 Adc.
- What is the typical on-state resistance of the NTD2955G?
The typical static drain-source on-state resistance (RDS(on)) is 0.155 Ω at VGS = -10 Vdc and ID = -6.0 Adc.
- Is the NTD2955G suitable for automotive applications?
- What is the operating temperature range of the NTD2955G?
The operating and storage temperature range is -55 to 175°C.
- What is the maximum total power dissipation of the NTD2955G at 25°C?
The maximum total power dissipation (PD) at Ta = 25°C is 55 W.
- Is the NTD2955G Pb-Free and RoHS Compliant?
- What are the typical turn-on and turn-off delay times of the NTD2955G?
The typical turn-on delay time (td(on)) is 10-20 ns, and the typical turn-off delay time (td(off)) is 26-40 ns.
- What is the gate threshold voltage range of the NTD2955G?
The gate threshold voltage (VGS(th)) range is -2.0 to -4.0 Vdc.
- What are some common applications of the NTD2955G MOSFET?
