NTD2955PT4G
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onsemi NTD2955PT4G

Manufacturer No:
NTD2955PT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD2955PT4G is a P-Channel power MOSFET produced by onsemi, designed for high-performance and reliability in various power management applications. This device is part of the DPAK package family and is known for its low-voltage, high-speed switching capabilities. It is particularly suited for applications requiring high energy handling in avalanche and commutation modes.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (Vdss)-60V
Drain-Source On Resistance (RDS(on))0.18Ω
Rated Power Dissipation55W
Gate Charge (Qg)30nC
Gate-Source Voltage (Vgss)-20V
Drain Current (ID)-12A
Turn-on Delay Time20ns
Turn-off Delay Time40ns
Rise Time85ns
Fall Time90ns
Operating Temperature Range-55°C to +175°C°C
Gate Source Threshold (VGS(th))-4V
TechnologySilicon
Input Capacitance (Ciss)500-750pF

Key Features

  • Avalanche energy specified, ensuring robust performance under high energy conditions.
  • Designed for low-voltage, high-speed switching applications.
  • High drain current capability of up to -12 A.
  • Low on-resistance of 0.18 Ω, minimizing power losses.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • High operating temperature range from -55°C to +175°C.

Applications

The NTD2955PT4G is well-suited for a variety of power management applications, including:

  • Power supplies and converters.
  • Power motor controls.
  • Bridge circuits where high diode speed and safe operating areas are critical.
  • Automotive and industrial systems requiring high reliability and performance.

Q & A

  1. What is the drain-to-source voltage rating of the NTD2955PT4G?
    The drain-to-source voltage rating is -60 V.
  2. What is the maximum drain current of the NTD2955PT4G?
    The maximum drain current is -12 A.
  3. What is the typical on-resistance of the NTD2955PT4G?
    The typical on-resistance is 0.155 Ω, with a maximum of 0.180 Ω.
  4. What is the gate charge of the NTD2955PT4G?
    The gate charge is 30 nC.
  5. What is the operating temperature range of the NTD2955PT4G?
    The operating temperature range is from -55°C to +175°C.
  6. Is the NTD2955PT4G Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  7. What are some common applications of the NTD2955PT4G?
    Common applications include power supplies, converters, power motor controls, and bridge circuits.
  8. What package type is the NTD2955PT4G available in?
    The NTD2955PT4G is available in the DPAK package.
  9. Is the NTD2955PT4G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified and PPAP capable.
  10. What is the input capacitance of the NTD2955PT4G?
    The input capacitance is between 500 pF and 750 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD2955PT4G NTD2955T4G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 10V 180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V 750 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 55W (Tj) 55W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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