Overview
The NTD2955-1G is a P-Channel Power MOSFET produced by ON Semiconductor. This device is designed to withstand high energy in the avalanche and commutation modes, making it suitable for low-voltage, high-speed switching applications. It is particularly well-suited for use in power supplies, converters, and power motor controls, especially in bridge circuits where diode speed and commutating safe operating areas are critical.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Maximum Drain-Source Voltage | Vds | - | - | -60 | Vdc |
| Maximum Gate-Source Voltage | Vgs | - | - | -20 | Vdc |
| Maximum Drain Current | Id | - | - | -12 | A |
| Maximum Junction Temperature | Tj | - | - | 175 | °C |
| Maximum Power Dissipation | Pd | - | - | 55 | W |
| Drain-Source On-State Resistance | Rds(on) | - | 0.18 | - | Ω |
| Total Gate Charge | Qg | - | 15 | - | nC |
| Rise Time | tr | - | 45 | - | ns |
| Output Capacitance | Coss | - | 150 | - | pF |
Key Features
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Designed for Low-Voltage, High-Speed Switching Applications
- Withstands High Energy in the Avalanche and Commutation Modes
- NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free and RoHS Compliant
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits where Diode Speed and Commutating Safe Operating Areas are Critical
Q & A
- What is the maximum drain-source voltage of the NTD2955-1G MOSFET?
The maximum drain-source voltage is -60 Vdc.
- What is the maximum drain current of the NTD2955-1G MOSFET?
The maximum drain current is -12 A.
- What is the maximum junction temperature of the NTD2955-1G MOSFET?
The maximum junction temperature is 175 °C.
- What is the typical drain-source on-state resistance of the NTD2955-1G MOSFET?
The typical drain-source on-state resistance is 0.18 Ω.
- Is the NTD2955-1G MOSFET RoHS compliant?
Yes, the NTD2955-1G MOSFET is Pb-Free and RoHS compliant.
- What are the primary applications of the NTD2955-1G MOSFET?
The primary applications include power supplies, converters, power motor controls, and bridge circuits.
- Does the NTD2955-1G MOSFET have any special certifications for automotive use?
Yes, it is AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.
- What is the package type of the NTD2955-1G MOSFET?
The package type is IPAK (Through Hole).
- What is the maximum power dissipation of the NTD2955-1G MOSFET?
The maximum power dissipation is 55 W.
- What is the rise time of the NTD2955-1G MOSFET?
The rise time is typically 45 ns.
