FDN336P-NL
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onsemi FDN336P-NL

Manufacturer No:
FDN336P-NL
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.3A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN336P-NL is a P-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to offer low on-state resistance and minimal gate charge, ensuring superior switching performance. It is particularly suited for applications in portable electronics, including load switching, power management, battery charging circuits, and DC-DC conversion.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) -20 V
Gate to Source Voltage (Vgss) ±8 V
Continuous Drain Current (Id) @ 25°C -1.3 A
Pulsed Drain Current (Id) -10 A
Maximum Power Dissipation (Pd) 0.5 W
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 250 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 75 °C/W
Gate Threshold Voltage (Vgs(th)) -0.4 to -1.5 V
Static Drain-Source On-Resistance (Rds(on)) @ Vgs = -4.5V, Id = -1.3A 0.20 Ω
Gate Charge (Qg) @ Vgs = -4.5V 3.6 nC (Typical) nC
Input Capacitance (Ciss) @ Vds = -10V, Vgs = 0V, f = 1MHz 330 pF pF

Key Features

  • Low on-state resistance (Rds(on)) of 0.20 Ω at Vgs = -4.5V and Id = -1.3A.
  • Low gate charge (Qg) of 3.6 nC (Typical) for superior switching performance.
  • High performance trench technology for extremely low Rds(on).
  • SUPERSOT-3 package providing low Rds(on) and 30% higher power handling capability than SOT23 in the same footprint.
  • Operating temperature range of -55°C to +150°C.

Applications

The FDN336P-NL is well-suited for various applications in portable electronics, including:

  • Load switching and power management.
  • Battery charging circuits.
  • DC-DC conversion.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the FDN336P-NL?

    The maximum drain to source voltage (Vdss) is -20 V.

  2. What is the continuous drain current (Id) rating at 25°C?

    The continuous drain current (Id) rating at 25°C is -1.3 A.

  3. What is the maximum power dissipation (Pd) of the FDN336P-NL?

    The maximum power dissipation (Pd) is 0.5 W.

  4. What is the operating temperature range of the FDN336P-NL?

    The operating temperature range is -55°C to +150°C.

  5. What is the typical gate charge (Qg) of the FDN336P-NL?

    The typical gate charge (Qg) is 3.6 nC at Vgs = -4.5V.

  6. What package type does the FDN336P-NL use?

    The FDN336P-NL uses the SUPERSOT-3 package.

  7. Is the FDN336P-NL still in production?

    No, the FDN336P-NL is obsolete and no longer manufactured.

  8. What are some common applications for the FDN336P-NL?

    Common applications include load switching, power management, battery charging circuits, and DC-DC conversion in portable electronics.

  9. What is the thermal resistance, junction-to-ambient (RθJA), of the FDN336P-NL?

    The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.

  10. What is the static drain-source on-resistance (Rds(on)) at Vgs = -4.5V and Id = -1.3A?

    The static drain-source on-resistance (Rds(on)) is 0.20 Ω at Vgs = -4.5V and Id = -1.3A.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
FDN336P
FDN336P
MOSFET P-CH 20V 1.3A SUPERSOT3

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