Overview
The FDN336P is a single P-Channel 2.5V specified PowerTrench® MOSFET produced by onsemi. This device is fabricated using onsemi's advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. The FDN336P is particularly suited for applications in portable electronics, including load switching, power management, battery charging circuits, and DC/DC conversion.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | -20 | V |
| Gate to Source Voltage (VGSS) | ±8 | V |
| Continuous Drain Current (ID) | -1.3 | A |
| Pulsed Drain Current (ID) | -10 | A |
| Maximum Power Dissipation (PD) | 0.5 / 0.46 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 250 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 75 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = -4.5V, ID = -1.3A | 0.20 | Ω |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = -2.5V, ID = -1.1A | 0.27 | Ω |
| Total Gate Charge (Qg) | 3.6 | nC |
Key Features
- High performance trench technology for extremely low RDS(on)
- Low gate charge (3.6 nC typical)
- SuperSOT™-3 package providing low RDS(on) and 30% higher power handling capability than SOT23 in the same footprint
- Low on-state resistance: RDS(on) = 0.20 Ω @ VGS = -4.5 V, RDS(on) = 0.27 Ω @ VGS = -2.5 V
- High on-state drain current: -1.3 A continuous, -10 A pulsed
Applications
The FDN336P is well-suited for various applications in portable electronics, including:
- Load switching and power management
- Battery charging circuits
- DC/DC conversion
Q & A
- What is the maximum drain to source voltage (VDSS) of the FDN336P?
The maximum drain to source voltage (VDSS) is -20 V. - What is the gate to source voltage (VGSS) range for the FDN336P?
The gate to source voltage (VGSS) range is ±8 V. - What is the continuous drain current (ID) rating for the FDN336P?
The continuous drain current (ID) rating is -1.3 A. - What is the maximum power dissipation (PD) of the FDN336P?
The maximum power dissipation (PD) is 0.5 W (or 0.46 W under specific conditions). - What is the operating and storage junction temperature range for the FDN336P?
The operating and storage junction temperature range is -55 to +150 °C. - What is the thermal resistance, junction-to-ambient (RθJA), for the FDN336P?
The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W. - What is the typical total gate charge (Qg) for the FDN336P?
The typical total gate charge (Qg) is 3.6 nC. - What are the common applications of the FDN336P?
The FDN336P is commonly used in load switching, power management, battery charging circuits, and DC/DC conversion. - What package type does the FDN336P use?
The FDN336P uses the SuperSOT™-3 package. - What are the benefits of the SuperSOT™-3 package?
The SuperSOT™-3 package provides low RDS(on) and 30% higher power handling capability than SOT23 in the same footprint.
