Overview
The FDN306P is a P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This MOSFET is specifically designed for low voltage applications, particularly in battery power management. It offers superior switching performance and is optimized for low in-line power loss and fast switching capabilities.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -12 | V |
| Gate-Source Voltage (VGSS) | ±1.8 | V |
| Continuous Drain Current (ID) | -2.6 | A |
| Pulsed Drain Current (ID) | -10 | A |
| Power Dissipation (PD) | 0.5 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 250 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 75 | °C/W |
| Gate Threshold Voltage (VGS(th)) | -1 to -1.9 | V |
| Static Drain-Source On-Resistance (RDS(ON)) at VGS = -1.8 V | 150 mΩ | mΩ |
| Low Gate Charge | 6.2 nC Typical | nC |
Key Features
- Advanced PowerTrench process for low on-state resistance and low gate charge.
- Optimized for low voltage and battery-powered applications.
- High performance trench technology for extremely low RDS(ON).
- Low in-line power loss and fast switching capabilities.
- Pb-free and RoHS compliant.
- High power version of the industry standard SOT-23 package.
Applications
The FDN306P is well-suited for various low voltage and battery-powered applications, including but not limited to:
- Battery power management systems.
- Portable electronic devices.
- Low voltage DC-DC converters.
- Power management in mobile devices.
Q & A
- What is the drain-source voltage rating of the FDN306P MOSFET?
The drain-source voltage (VDSS) rating is -12 V. - What is the continuous drain current rating of the FDN306P?
The continuous drain current (ID) rating is -2.6 A. - What is the thermal resistance, junction-to-ambient (RθJA), of the FDN306P?
The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W. - Is the FDN306P Pb-free and RoHS compliant?
Yes, the FDN306P is Pb-free and RoHS compliant. - What is the typical gate charge of the FDN306P?
The typical gate charge is 6.2 nC. - What are the typical applications of the FDN306P MOSFET?
The FDN306P is typically used in battery power management systems, portable electronic devices, low voltage DC-DC converters, and power management in mobile devices. - What is the operating and storage junction temperature range of the FDN306P?
The operating and storage junction temperature range is -55 to +150 °C. - What is the package type of the FDN306P?
The package type is SOT-23. - What is the gate threshold voltage range of the FDN306P?
The gate threshold voltage (VGS(th)) range is -1 to -1.9 V. - How does the PowerTrench process benefit the FDN306P MOSFET?
The PowerTrench process minimizes the on-state resistance and maintains low gate charge, enhancing switching performance.
