Overview
The FDN302P is a P-Channel 2.5V specified PowerTrench® MOSFET produced by ON Semiconductor. This MOSFET utilizes a rugged gate version of Fairchild’s advanced PowerTrench process, optimized for power management applications. It features a wide range of gate drive voltage (2.5V – 12V), making it versatile for various power management needs.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | -20 | V | |
| Gate-Source Voltage | VGSS | ±12 | ±12 | V | |
| Continuous Drain Current | ID | -2.4 | -2.4 | A | |
| Pulsed Drain Current | ID | -10 | A | ||
| Maximum Power Dissipation | PD | 0.5 | W | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | °C/W | ||
| Thermal Resistance, Junction-to-Case | RθJC | 75 | °C/W | ||
| Gate Threshold Voltage | VGS(th) | -0.6 | -1.0 | -1.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | 0.055 | 0.080 | Ω @ VGS = -4.5V, -2.5V | |
| Total Gate Charge | Qg | 9 | 14 | nC | |
| Turn-On Delay Time | td(on) | 13 | 23 | ns | |
| Turn-On Rise Time | tr | 11 | 20 | ns | |
| Turn-Off Delay Time | td(off) | 25 | 40 | ns | |
| Turn-Off Fall Time | tf | 15 | 27 | ns |
Key Features
- Low On-Resistance: RDS(ON) = 0.055 Ω @ VGS = -4.5 V, RDS(ON) = 0.080 Ω @ VGS = -2.5 V
- Fast Switching Speed: Fast turn-on and turn-off times, with td(on) = 13-23 ns and td(off) = 25-40 ns
- High Performance Trench Technology: Utilizes Fairchild’s advanced PowerTrench process for extremely low RDS(ON) and high power handling capability
- SuperSOT-3 Package: Provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
- Wide Gate Drive Voltage Range: Operates with gate drive voltages from 2.5V to 12V
- Halogen-Free and RoHS Compliant: Compliant with RoHS Directive 2002/95/EC and halogen-free according to IEC 61249-2-21
Applications
- Power Management: Optimized for power management applications, including power switching and voltage regulation
- Load Switch: Suitable for load switching applications due to its fast switching speed and low on-resistance
- Battery Protection: Used in battery protection circuits to manage and protect battery health
Q & A
- What is the maximum drain-source voltage of the FDN302P MOSFET?
The maximum drain-source voltage (VDSS) is -20 V
- What is the maximum gate-source voltage of the FDN302P MOSFET?
The maximum gate-source voltage (VGSS) is ±12 V
- What is the continuous drain current rating of the FDN302P MOSFET?
The continuous drain current (ID) is -2.4 A
- What is the typical on-resistance of the FDN302P MOSFET at VGS = -4.5 V?
The typical on-resistance (RDS(ON)) at VGS = -4.5 V is 0.055 Ω
- What is the package type of the FDN302P MOSFET?
The FDN302P MOSFET is packaged in a SuperSOT-3 package
- Is the FDN302P MOSFET RoHS compliant?
Yes, the FDN302P MOSFET is RoHS compliant according to Directive 2002/95/EC
- What are the typical applications of the FDN302P MOSFET?
The FDN302P MOSFET is typically used in power management, load switch, and battery protection applications
- What is the maximum junction temperature of the FDN302P MOSFET?
The maximum junction temperature (TJ) is 150 °C
- What is the total gate charge of the FDN302P MOSFET?
The total gate charge (Qg) is 9 nC (typical)
- What are the turn-on and turn-off delay times of the FDN302P MOSFET?
The turn-on delay time (td(on)) is 13-23 ns, and the turn-off delay time (td(off)) is 25-40 ns
- What is the maximum power dissipation of the FDN302P MOSFET?
The maximum power dissipation (PD) is 0.5 W
