FDN304P
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onsemi FDN304P

Manufacturer No:
FDN304P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.4A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN304P is a P-Channel MOSFET from onsemi, optimized for low-voltage applications using the advanced POWERTRENCH process. This device is particularly suited for battery power management, load switching, and battery protection. It features a SUPERSOT-23 package, which offers 30% higher power handling capability compared to the standard SOT-23 package in the same footprint. The FDN304P is Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

ParameterMinTypMaxUnit
Drain-Source Voltage (VDSS)-20--V
Gate-Source Voltage (VGSS)--±8V
Continuous Drain Current (ID)-2.4--A
Pulsed Drain Current (ID)---10A
On-State Resistance (RDS(ON)) @ VGS = -4.5V52--mΩ
On-State Resistance (RDS(ON)) @ VGS = -2.5V70--mΩ
On-State Resistance (RDS(ON)) @ VGS = -1.8V100--mΩ
Turn-On Delay Time (td(on))15-27ns
Turn-On Rise Time (tr)15-27ns
Turn-Off Delay Time (td(off))40-64ns
Turn-Off Fall Time (tf)25-40ns
Total Gate Charge (Qg)12-20nC

Key Features

  • Advanced low voltage POWERTRENCH process for high performance and low RDS(ON)
  • Fast switching speed
  • SUPERSOT-23 package offering 30% higher power handling capability than SOT-23 in the same footprint
  • Pb-free, halogen-free, and RoHS compliant
  • Optimized for battery power management applications

Applications

  • Battery Management
  • Load Switch
  • Battery Protection

Q & A

  1. What is the maximum drain-source voltage of the FDN304P MOSFET? The maximum drain-source voltage (VDSS) is -20 V.
  2. What is the typical on-state resistance (RDS(ON)) at VGS = -4.5V? The typical on-state resistance (RDS(ON)) at VGS = -4.5V is 52 mΩ.
  3. What is the continuous drain current rating of the FDN304P? The continuous drain current (ID) rating is -2.4 A.
  4. What package type does the FDN304P use? The FDN304P uses a SUPERSOT-23 package.
  5. Is the FDN304P RoHS compliant? Yes, the FDN304P is Pb-free, halogen-free, and RoHS compliant.
  6. What are the typical applications of the FDN304P? The FDN304P is typically used in battery management, load switching, and battery protection applications.
  7. What is the turn-on delay time of the FDN304P? The turn-on delay time (td(on)) is between 15 and 27 ns.
  8. What is the total gate charge (Qg) of the FDN304P? The total gate charge (Qg) is between 12 and 20 nC.
  9. Does the FDN304P have ESD protection? Yes, the FDN304PZ variant specifically mentions ESD protection diode, though it is not explicitly stated for the FDN304P, it is part of the overall design considerations for similar devices.
  10. What is the maximum power dissipation of the FDN304P? The maximum power dissipation (PD) is dependent on the junction temperature and the thermal resistance of the package and the PCB, but it is specified under certain conditions in the datasheet.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:52mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1312 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDN304P FDN306P FDN304PZ FDN308P FDN302P
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 12 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.6A (Ta) 2.4A (Ta) 1.5A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 2.4A, 4.5V 40mOhm @ 2.6A, 4.5V 52mOhm @ 2.4A, 4.5V 125mOhm @ 1.5A, 4.5V 55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 17 nC @ 4.5 V 20 nC @ 4.5 V 5.4 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1312 pF @ 10 V 1138 pF @ 6 V 1310 pF @ 10 V 341 pF @ 10 V 882 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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