Overview
The 2N7002LT3, produced by onsemi, is an N-Channel enhancement mode MOSFET. This device is fabricated using onsemi’s proprietary, high cell density, DMOS technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The 2N7002LT3 is suitable for low-voltage, low-current applications and can handle up to 400mA DC with pulsed currents up to 2A.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage - Continuous | VGSS | ±20 | V |
| Maximum Drain Current - Continuous | ID | 115 | mA |
| Maximum Drain Current - Pulsed | ID | 800 | mA |
| Maximum Power Dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
| Gate Threshold Voltage | VGS(th) | 1 to 2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | 0.09 to 1.2 | mΩ @ VGS = 10 V, ID = 500 mA |
Key Features
- High density cell design for extremely low RDS(on)
- Voltage controlled small signal switch
- Rugged and reliable performance
- High saturation current capability
- ESD protection level: HBM > 100 V, CDM > 2 kV
- Pb-free and halogen-free package
Applications
- Small servo motor control
- Power MOSFET gate drivers
- Other switching applications requiring low voltage and low current
Q & A
- What is the maximum drain-to-source voltage of the 2N7002LT3?
The maximum drain-to-source voltage is 60 V.
- What is the continuous gate-to-source voltage rating?
The continuous gate-to-source voltage rating is ±20 V.
- What is the maximum continuous drain current?
The maximum continuous drain current is 115 mA.
- What is the maximum pulsed drain current?
The maximum pulsed drain current is 800 mA.
- What is the operating temperature range for the 2N7002LT3?
The operating and storage temperature range is -55 to 150°C.
- What is the typical gate threshold voltage?
The typical gate threshold voltage is between 1 to 2.5 V.
- What is the static drain-source on-resistance at VGS = 10 V and ID = 500 mA?
The static drain-source on-resistance is between 0.09 to 1.2 mΩ.
- Is the 2N7002LT3 Pb-free and halogen-free?
- What are some common applications for the 2N7002LT3?
- What technology is used to fabricate the 2N7002LT3?
The 2N7002LT3 is fabricated using onsemi’s proprietary, high cell density, DMOS technology.
