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2N7002LT1
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onsemi 2N7002LT1

Manufacturer No:
2N7002LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT1 is a small signal N-Channel MOSFET produced by onsemi, packaged in the SOT-23 case. This device is designed for low power applications and is known for its compact size and robust performance. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS60Vdc
Drain-Gate VoltageVDGR60Vdc
Continuous Drain Current at 25°CID±115mA
Continuous Drain Current at 100°CID±75mA
Pulsed Drain CurrentIDM±800mA
Gate-Source VoltageVGS±20Vdc
Gate Threshold VoltageVGS(th)1.0 - 2.5V
Static Drain-Source On-ResistanceRDS(on)7.5Ω @ VGS = 10 V

Key Features

  • Low side load switch and DC-DC converter applications.
  • Compact SOT-23 package.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Low on-resistance (RDS(on)) of 7.5 Ω at VGS = 10 V.
  • High drain-source breakdown voltage (VDSS) of 60 V.

Applications

  • Low side load switching.
  • DC-DC converters.
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones.
  • Automotive and other applications requiring high reliability and compliance with stringent standards.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002LT1 MOSFET?
    The maximum drain-source voltage (VDSS) is 60 Vdc.
  2. What is the continuous drain current at 25°C for the 2N7002LT1?
    The continuous drain current at 25°C is ±115 mA.
  3. Is the 2N7002LT1 MOSFET RoHS compliant?
    Yes, the 2N7002LT1 is Pb-free, halogen-free, and RoHS compliant.
  4. What is the typical on-resistance of the 2N7002LT1 at VGS = 10 V?
    The typical static drain-source on-resistance (RDS(on)) is 7.5 Ω at VGS = 10 V.
  5. What are some common applications of the 2N7002LT1 MOSFET?
    Common applications include low side load switching, DC-DC converters, and portable devices like DSC, PDA, and cell phones.
  6. Is the 2N7002LT1 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  7. What is the gate threshold voltage range of the 2N7002LT1?
    The gate threshold voltage (VGS(th)) range is 1.0 to 2.5 V.
  8. What is the maximum gate-source voltage for the 2N7002LT1?
    The maximum gate-source voltage (VGS) is ±20 Vdc.
  9. What package type is the 2N7002LT1 available in?
    The 2N7002LT1 is available in the SOT-23 package.
  10. Is the 2N7002LT1 available in tape and reel packaging?
    Yes, it is available in tape and reel packaging with various quantities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT1H
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 225mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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