2N7002LT1H
  • Share:

onsemi 2N7002LT1H

Manufacturer No:
2N7002LT1H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT1H is an N-Channel enhancement mode MOSFET produced by onsemi using a proprietary, high cell density, DMOS technology. This device is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is suitable for low voltage, low current applications and can handle up to 400mA DC with pulsed currents up to 2A. The 2N7002LT1H is particularly suited for applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage VDGR 60 Vdc
Continuous Drain Current at TC = 25°C ID ±115 mA
Continuous Drain Current at TC = 100°C ID ±75 mA
Pulsed Drain Current IDM ±800 mA
Gate-Source Voltage VGS ±20 Vdc
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V
On-State Resistance at VGS = 10 V RDS(on) 7.5
Package Type SOT-23

Key Features

  • High density cell design for extremely low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • Pb-free, halogen-free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive applications (2V7002L variant)

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Low side load switch
  • DC-DC converters
  • Portable applications such as DSC, PDA, and cell phones

Q & A

  1. What is the maximum drain-source voltage of the 2N7002LT1H?

    The maximum drain-source voltage is 60 Vdc.

  2. What is the continuous drain current at TC = 25°C?

    The continuous drain current at TC = 25°C is ±115 mA.

  3. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.5 V.

  4. What is the on-state resistance at VGS = 10 V?

    The on-state resistance at VGS = 10 V is 7.5 mΩ.

  5. Is the 2N7002LT1H RoHS compliant?
  6. What are some common applications of the 2N7002LT1H?
  7. What package type is the 2N7002LT1H available in?

    The 2N7002LT1H is available in the SOT-23 package type.

  8. Is the 2N7002LT1H suitable for automotive applications?

    The 2V7002L variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  9. What is the maximum pulsed drain current?

    The maximum pulsed drain current is ±800 mA.

  10. What is the maximum gate-source voltage?

    The maximum gate-source voltage is ±20 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
231

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number 2N7002LT1H 2N7002LT7H 2N7002LT1 2N7002LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V - 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) - 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5