2N7002LT7H
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onsemi 2N7002LT7H

Manufacturer No:
2N7002LT7H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT7H is an N-Channel enhancement mode MOSFET produced by onsemi, utilizing their proprietary high cell density DMOS technology. This device is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is widely used in various electronic systems due to its high efficiency and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS ≤ 1 MΩ) VDGR 60 V
Gate-Source Voltage - Continuous VGSS ±20 V
Gate-Source Voltage - Non-Repetitive (tp < 50 ms) VGSS ±40 V
Maximum Drain Current - Continuous ID 115 mA
Maximum Drain Current - Pulsed ID 800 mA
Maximum Power Dissipation PD 150 mW
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Gate Threshold Voltage VGS(th) 2.0 - 3.0 V
Static Drain-Source On-Resistance RDS(ON) 1.2 - 7.5 Ω
Input Capacitance Ciss 20 - 50 pF
Output Capacitance Coss 11 - 25 pF
Reverse Transfer Capacitance Crss 2.0 - 5.0 pF

Key Features

  • High Density Cell Design: Minimizes on-state resistance for efficient operation.
  • Low On-Resistance: Ensures minimal voltage drop and high efficiency.
  • Low Gate Threshold Voltage: Facilitates easy switching and control.
  • Low Input Capacitance: Reduces the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for applications requiring quick response times.
  • Rugged and Reliable: Designed for long-term durability and performance.
  • Small Surface Mount Package: SOT-23 package for compact design.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Halogen and Antimony Free: Enhances safety and environmental sustainability.

Applications

  • Small Servo Motor Control: Suitable for controlling small servo motors in various applications.
  • Power MOSFET Gate Drivers: Used to drive power MOSFETs in power management systems.
  • DC-DC Converters: Ideal for high-efficiency power conversion in DC-DC converters.
  • Power Management Functions: Used in battery-operated systems and solid-state relays.
  • Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.: Versatile use in driving various types of loads.

Q & A

  1. What is the maximum drain-source voltage (VDSS) for the 2N7002LT7H?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the typical on-state resistance (RDS(ON)) of the 2N7002LT7H?

    The typical on-state resistance (RDS(ON)) is between 1.2 Ω and 7.5 Ω at VGS = 5 V and ID = 50 mA.

  3. What is the maximum continuous drain current (ID) for the 2N7002LT7H?

    The maximum continuous drain current (ID) is 115 mA.

  4. What is the operating temperature range for the 2N7002LT7H?

    The operating and storage temperature range is -55°C to 150°C.

  5. Is the 2N7002LT7H RoHS compliant?

    Yes, the 2N7002LT7H is totally lead-free and fully RoHS compliant.

  6. What package type is the 2N7002LT7H available in?

    The 2N7002LT7H is available in the SOT-23 package.

  7. What are some common applications for the 2N7002LT7H?

    Common applications include small servo motor control, power MOSFET gate drivers, DC-DC converters, and power management functions.

  8. What is the gate threshold voltage (VGS(th)) range for the 2N7002LT7H?

    The gate threshold voltage (VGS(th)) range is between 2.0 V and 3.0 V.

  9. Does the 2N7002LT7H have fast switching capabilities?

    Yes, the 2N7002LT7H is known for its fast switching speed, making it suitable for applications requiring quick response times.

  10. Is the 2N7002LT7H suitable for high-frequency operations?

    Yes, due to its low input capacitance, the 2N7002LT7H is suitable for high-frequency operations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002LT7H 2N7002LT1H 2N7002LT7G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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