2N7002LT7G
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onsemi 2N7002LT7G

Manufacturer No:
2N7002LT7G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT7G is an N-Channel Enhancement Mode MOSFET produced by onsemi. This small signal MOSFET is packaged in a SOT-23 case and is designed for high efficiency power management applications. It is Pb-free, halogen-free, and fully RoHS compliant, making it suitable for a wide range of electronic devices. The 2N7002LT7G is also AEC-Q101 qualified, ensuring high reliability for automotive and other demanding applications.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Continuous Drain Current (TC = 25°C) ID ±115 mA
Continuous Drain Current (TC = 100°C) ID ±75 mA
Pulsed Drain Current IDM ±800 mA
Gate-Source Voltage - Continuous VGS ±20 Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) VGSM ±40 Vpk
Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 1.0 - 2.5 V
On-Resistance (VGS = 10 V, ID = 500 mA) RDS(on) 7.5 Ω
Thermal Resistance, Junction to Ambient RθJA 348 °C/W

Key Features

  • Low On-Resistance: The 2N7002LT7G features a low on-resistance, which enhances its efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate threshold voltage range of 1.0 to 2.5 V, this MOSFET is easy to switch on and off.
  • Fast Switching Speed: It offers fast switching characteristics, making it suitable for high-frequency applications.
  • Small Surface Mount Package: The SOT-23 package is compact and ideal for space-constrained designs.
  • RoHS Compliant and Pb-Free: The device is fully RoHS compliant, Pb-free, and halogen-free, ensuring environmental sustainability.
  • AEC-Q101 Qualified: This MOSFET meets the AEC-Q101 standards, ensuring high reliability for automotive and other critical applications.

Applications

  • Motor Control: The 2N7002LT7G is suitable for motor control applications due to its high efficiency and fast switching capabilities.
  • Power Management Functions: It is ideal for various power management functions, including voltage regulation and power switching.
  • Automotive Systems: With its AEC-Q101 qualification, this MOSFET is reliable for use in automotive systems.
  • General Electronic Devices: Its compact package and low on-resistance make it a versatile component for a wide range of electronic devices.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002LT7G?

    The maximum drain-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is ±115 mA.

  3. Is the 2N7002LT7G RoHS compliant?

    Yes, the 2N7002LT7G is fully RoHS compliant, Pb-free, and halogen-free.

  4. What is the gate threshold voltage range?

    The gate threshold voltage range is 1.0 to 2.5 V.

  5. What is the typical on-resistance at VGS = 10 V and ID = 500 mA?

    The typical on-resistance is 7.5 Ω.

  6. What are the common applications of the 2N7002LT7G?

    Common applications include motor control, power management functions, and automotive systems.

  7. Is the 2N7002LT7G AEC-Q101 qualified?

    Yes, the 2N7002LT7G is AEC-Q101 qualified, ensuring high reliability for automotive and other critical applications.

  8. What is the package type of the 2N7002LT7G?

    The package type is SOT-23.

  9. What is the thermal resistance, junction to ambient?

    The thermal resistance, junction to ambient (RθJA), is 348 °C/W.

  10. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is ±800 mA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002LT7G 2N7002LT7H 2N7002ET7G 2N7002KT7G 2N7002LT1G 2N7002LT3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 260mA (Ta) 380mA (Ta) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.81 nC @ 5 V 0.7 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 40 pF @ 25 V 45 pF @ 20 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 300mW (Tj) 300mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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