2N7002KT7G
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onsemi 2N7002KT7G

Manufacturer No:
2N7002KT7G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 380MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KT7G is a small signal, single N-channel MOSFET produced by onsemi. This device is designed for low-power applications and is known for its high performance and reliability. It is packaged in a SOT-23 surface mount package, making it suitable for a variety of compact electronic designs. The 2N7002KT7G is also AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards.

Key Specifications

CharacteristicSymbolValueUnit
Drain-Source VoltageVDS60V
Drain CurrentID380mA
Gate-Source Threshold VoltageVGS(TH)1.0 - 2.5V
On-ResistanceRDS(on)2 Ω (VGS = 10 V, ID = 500 mA)
4 Ω (VGS = 4.5 V, ID = 200 mA)
Ω
Input CapacitanceCiss30 pFpF
Output CapacitanceCoss6 pFpF
Reverse Transfer CapacitanceCrss2.5 pFpF
Turn-On Delay Timetd(ON)25 nsns
Turn-Off Delay Timetd(OFF)35 nsns
Junction-to-Ambient Thermal ResistanceRthJA350 °C/W°C/W
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +150 °C°C

Key Features

  • ESD protected with 2000 V ESD protection
  • Low on-resistance (RDS(on))
  • Low threshold voltage (VGS(TH))
  • Low input capacitance
  • Fast switching speed
  • Low input and output leakage
  • TrenchFET® power MOSFET technology
  • Pb-free, halogen-free/BFR-free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KT7G MOSFET?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance of the 2N7002KT7G?
    The typical on-resistance (RDS(on)) is 2 Ω at VGS = 10 V and ID = 500 mA, and 4 Ω at VGS = 4.5 V and ID = 200 mA.
  3. What is the junction-to-ambient thermal resistance of the 2N7002KT7G?
    The junction-to-ambient thermal resistance (RthJA) is 350 °C/W.
  4. Is the 2N7002KT7G ESD protected?
    Yes, the 2N7002KT7G has 2000 V ESD protection.
  5. What are the operating and storage temperature ranges for the 2N7002KT7G?
    The operating and storage temperature range is -55 to +150 °C.
  6. Is the 2N7002KT7G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  7. What is the typical turn-on and turn-off delay time of the 2N7002KT7G?
    The typical turn-on delay time (td(ON)) is 25 ns, and the typical turn-off delay time (td(OFF)) is 35 ns.
  8. What type of package does the 2N7002KT7G come in?
    The 2N7002KT7G comes in a SOT-23 surface mount package.
  9. Is the 2N7002KT7G RoHS compliant?
    Yes, the 2N7002KT7G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  10. What are some common applications of the 2N7002KT7G?
    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable electronics such as DSC, PDA, and cell phones.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002KT7G 2N7002LT7G 2N7002ET7G 2N7002KT1G 2N7002KT3G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) 115mA (Tc) 260mA (Ta) 320mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V - 0.81 nC @ 5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 20 V 50 pF @ 25 V 40 pF @ 25 V 24.5 pF @ 20 V 24.5 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 300mW (Ta) 225mW (Ta) 300mW (Tj) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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