2N7002KT7G
  • Share:

onsemi 2N7002KT7G

Manufacturer No:
2N7002KT7G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 380MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KT7G is a small signal, single N-channel MOSFET produced by onsemi. This device is designed for low-power applications and is known for its high performance and reliability. It is packaged in a SOT-23 surface mount package, making it suitable for a variety of compact electronic designs. The 2N7002KT7G is also AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards.

Key Specifications

CharacteristicSymbolValueUnit
Drain-Source VoltageVDS60V
Drain CurrentID380mA
Gate-Source Threshold VoltageVGS(TH)1.0 - 2.5V
On-ResistanceRDS(on)2 Ω (VGS = 10 V, ID = 500 mA)
4 Ω (VGS = 4.5 V, ID = 200 mA)
Ω
Input CapacitanceCiss30 pFpF
Output CapacitanceCoss6 pFpF
Reverse Transfer CapacitanceCrss2.5 pFpF
Turn-On Delay Timetd(ON)25 nsns
Turn-Off Delay Timetd(OFF)35 nsns
Junction-to-Ambient Thermal ResistanceRthJA350 °C/W°C/W
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +150 °C°C

Key Features

  • ESD protected with 2000 V ESD protection
  • Low on-resistance (RDS(on))
  • Low threshold voltage (VGS(TH))
  • Low input capacitance
  • Fast switching speed
  • Low input and output leakage
  • TrenchFET® power MOSFET technology
  • Pb-free, halogen-free/BFR-free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KT7G MOSFET?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance of the 2N7002KT7G?
    The typical on-resistance (RDS(on)) is 2 Ω at VGS = 10 V and ID = 500 mA, and 4 Ω at VGS = 4.5 V and ID = 200 mA.
  3. What is the junction-to-ambient thermal resistance of the 2N7002KT7G?
    The junction-to-ambient thermal resistance (RthJA) is 350 °C/W.
  4. Is the 2N7002KT7G ESD protected?
    Yes, the 2N7002KT7G has 2000 V ESD protection.
  5. What are the operating and storage temperature ranges for the 2N7002KT7G?
    The operating and storage temperature range is -55 to +150 °C.
  6. Is the 2N7002KT7G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  7. What is the typical turn-on and turn-off delay time of the 2N7002KT7G?
    The typical turn-on delay time (td(ON)) is 25 ns, and the typical turn-off delay time (td(OFF)) is 35 ns.
  8. What type of package does the 2N7002KT7G come in?
    The 2N7002KT7G comes in a SOT-23 surface mount package.
  9. Is the 2N7002KT7G RoHS compliant?
    Yes, the 2N7002KT7G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  10. What are some common applications of the 2N7002KT7G?
    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable electronics such as DSC, PDA, and cell phones.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.24
2,756

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number 2N7002KT7G 2N7002LT7G 2N7002ET7G 2N7002KT1G 2N7002KT3G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) 115mA (Tc) 260mA (Ta) 320mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V - 0.81 nC @ 5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 20 V 50 pF @ 25 V 40 pF @ 25 V 24.5 pF @ 20 V 24.5 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 300mW (Ta) 225mW (Ta) 300mW (Tj) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN