2N7002KT1G
  • Share:

onsemi 2N7002KT1G

Manufacturer No:
2N7002KT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KT1G is a small signal, single N-Channel MOSFET produced by onsemi. This device is packaged in a SOT-23 surface mount package, making it suitable for a variety of applications where space is limited. The 2N7002KT1G is designed to operate with a maximum drain-source voltage of 60 V and a maximum continuous drain current of 380 mA. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

ParameterSymbolTypical ValueMaximum ValueUnit
Drain-Source VoltageVDS-60V
Drain CurrentID-380mA
Gate Threshold VoltageVGS(TH)1.0 - 2.3-V
Drain-Source On ResistanceRDS(on)1.19 (VGS = 10 V, ID = 500 mA)1.6 (VGS = 10 V, ID = 500 mA)Ω
Input CapacitanceCISS24.545pF
Output CapacitanceCOSS4.28.0pF
Reverse Transfer CapacitanceCRSS2.25.0pF
Junction-to-Ambient Thermal ResistanceRJA-300°C/W

Key Features

  • ESD Protected
  • Low RDS(on)
  • Surface Mount Package (SOT-23)
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • AEC-Q101 Qualified and PPAP Capable

Applications

  • Low Side Load Switch
  • Level Shift Circuits
  • DC-DC Converter
  • Portable Applications (e.g., DSC, PDA, Cell Phone)

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KT1G?
    The maximum drain-source voltage is 60 V.
  2. What is the maximum continuous drain current of the 2N7002KT1G?
    The maximum continuous drain current is 380 mA.
  3. What package type is the 2N7002KT1G available in?
    The 2N7002KT1G is available in a SOT-23 surface mount package.
  4. Is the 2N7002KT1G AEC-Q101 qualified?
    Yes, the 2N7002KT1G is AEC-Q101 qualified and PPAP capable.
  5. What are some common applications for the 2N7002KT1G?
    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.
  6. What is the typical gate threshold voltage of the 2N7002KT1G?
    The typical gate threshold voltage is between 1.0 V and 2.3 V.
  7. What is the drain-source on resistance of the 2N7002KT1G?
    The drain-source on resistance is typically 1.19 Ω (VGS = 10 V, ID = 500 mA) and a maximum of 1.6 Ω.
  8. Is the 2N7002KT1G ESD protected?
    Yes, the 2N7002KT1G is ESD protected.
  9. What are the thermal characteristics of the 2N7002KT1G?
    The junction-to-ambient thermal resistance is 300 °C/W.
  10. Is the 2N7002KT1G RoHS compliant?
    Yes, the 2N7002KT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24.5 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.24
474

Please send RFQ , we will respond immediately.

Same Series
2N7002KT1G
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
2V7002KT1G
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23

Similar Products

Part Number 2N7002KT1G 2N7002KT7G 2N7002WT1G 2N7002LT1G 2N7002KT3G 2N7002ET1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) 380mA (Ta) 310mA (Ta) 115mA (Tc) 320mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V - 0.7 nC @ 4.5 V 0.81 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24.5 pF @ 20 V 45 pF @ 20 V 24.5 pF @ 20 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 350mW (Ta) 300mW (Ta) 280mW (Tj) 225mW (Ta) 350mW (Ta) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB