2N7002KT1G
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onsemi 2N7002KT1G

Manufacturer No:
2N7002KT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 2N7002KT1G is a small signal, single N-Channel MOSFET produced by onsemi. This device is packaged in a SOT-23 surface mount package, making it suitable for a variety of applications where space is limited. The 2N7002KT1G is designed to operate with a maximum drain-source voltage of 60 V and a maximum continuous drain current of 380 mA. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

ParameterSymbolTypical ValueMaximum ValueUnit
Drain-Source VoltageVDS-60V
Drain CurrentID-380mA
Gate Threshold VoltageVGS(TH)1.0 - 2.3-V
Drain-Source On ResistanceRDS(on)1.19 (VGS = 10 V, ID = 500 mA)1.6 (VGS = 10 V, ID = 500 mA)Ω
Input CapacitanceCISS24.545pF
Output CapacitanceCOSS4.28.0pF
Reverse Transfer CapacitanceCRSS2.25.0pF
Junction-to-Ambient Thermal ResistanceRJA-300°C/W

Key Features

  • ESD Protected
  • Low RDS(on)
  • Surface Mount Package (SOT-23)
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • AEC-Q101 Qualified and PPAP Capable

Applications

  • Low Side Load Switch
  • Level Shift Circuits
  • DC-DC Converter
  • Portable Applications (e.g., DSC, PDA, Cell Phone)

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KT1G?
    The maximum drain-source voltage is 60 V.
  2. What is the maximum continuous drain current of the 2N7002KT1G?
    The maximum continuous drain current is 380 mA.
  3. What package type is the 2N7002KT1G available in?
    The 2N7002KT1G is available in a SOT-23 surface mount package.
  4. Is the 2N7002KT1G AEC-Q101 qualified?
    Yes, the 2N7002KT1G is AEC-Q101 qualified and PPAP capable.
  5. What are some common applications for the 2N7002KT1G?
    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.
  6. What is the typical gate threshold voltage of the 2N7002KT1G?
    The typical gate threshold voltage is between 1.0 V and 2.3 V.
  7. What is the drain-source on resistance of the 2N7002KT1G?
    The drain-source on resistance is typically 1.19 Ω (VGS = 10 V, ID = 500 mA) and a maximum of 1.6 Ω.
  8. Is the 2N7002KT1G ESD protected?
    Yes, the 2N7002KT1G is ESD protected.
  9. What are the thermal characteristics of the 2N7002KT1G?
    The junction-to-ambient thermal resistance is 300 °C/W.
  10. Is the 2N7002KT1G RoHS compliant?
    Yes, the 2N7002KT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24.5 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002KT1G
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
2V7002KT1G
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23

Similar Products

Part Number 2N7002KT1G 2N7002KT7G 2N7002WT1G 2N7002LT1G 2N7002KT3G 2N7002ET1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) 380mA (Ta) 310mA (Ta) 115mA (Tc) 320mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V - 0.7 nC @ 4.5 V 0.81 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24.5 pF @ 20 V 45 pF @ 20 V 24.5 pF @ 20 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 350mW (Ta) 300mW (Ta) 280mW (Tj) 225mW (Ta) 350mW (Ta) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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