Overview
The 2N7002E is a small signal N-Channel MOSFET produced by onsemi. This device is designed for low-power applications and features a compact SOT-23 package, making it ideal for space-constrained designs. The 2N7002E is built using trench technology, which enhances its performance by reducing on-resistance and improving thermal characteristics.
This MOSFET is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent reliability standards. Additionally, it is Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Drain Current (Steady State, TA = 25°C) | ID | 310 | mA |
| On-Resistance (RDS(on)) at VGS = 4.5 V | RDS(on) | 2.5 Ω | Ω |
| Threshold Voltage (VGS(th)) | VGS(th) | 0.8 to 3.0 | V |
Key Features
- Low RDS(on) for reduced power losses
- Small footprint SOT-23 surface mount package
- Trench technology for improved performance
- AEC-Q101 qualified and PPAP capable for automotive applications
- Pb-free, halogen-free, and RoHS compliant
Applications
- Low side load switch
- Level shift circuits
- DC-DC converters
- Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones
Q & A
- What is the maximum drain-to-source voltage of the 2N7002E MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the typical on-resistance (RDS(on)) of the 2N7002E?
The typical on-resistance (RDS(on)) at VGS = 4.5 V is 2.5 Ω.
- What are the key applications of the 2N7002E MOSFET?
The 2N7002E is used in low side load switches, level shift circuits, DC-DC converters, and various portable applications.
- Is the 2N7002E MOSFET RoHS compliant?
- What package type does the 2N7002E come in?
The 2N7002E comes in a small footprint SOT-23 surface mount package.
- What is the maximum drain current of the 2N7002E?
The maximum drain current (ID) is 310 mA at steady state conditions (TA = 25°C).
- Is the 2N7002E suitable for automotive applications?
- What technology is used in the 2N7002E MOSFET?
The 2N7002E uses trench technology to enhance its performance.
- What is the gate-to-source voltage range for the 2N7002E?
The gate-to-source voltage (VGS) range is ±20 V.
- What is the threshold voltage range of the 2N7002E?
The threshold voltage (VGS(th)) range is from 0.8 to 3.0 V.
