onsemi 2N7002ET1G

Manufacturer No:: 2N7002ET1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 60V 260MA SOT23-3
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Product Introduction

Overview

The 2N7002E is a small signal N-Channel MOSFET produced by onsemi. This device is designed for low-power applications and features a compact SOT-23 package, making it ideal for space-constrained designs. The 2N7002E is built using trench technology, which enhances its performance by reducing on-resistance and improving thermal characteristics.

This MOSFET is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent reliability standards. Additionally, it is Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter	Symbol	Value	Unit
Drain-to-Source Voltage	V_DSS	60	V
Gate-to-Source Voltage	V_GS	±20	V
Drain Current (Steady State, TA = 25°C)	I_D	310	mA
On-Resistance (R_DS(on)) at V_GS = 4.5 V	R_DS(on)	2.5 Ω	Ω
Threshold Voltage (V_GS(th))	V_GS(th)	0.8 to 3.0	V

Key Features

Low R_DS(on) for reduced power losses
Small footprint SOT-23 surface mount package
Trench technology for improved performance
AEC-Q101 qualified and PPAP capable for automotive applications
Pb-free, halogen-free, and RoHS compliant

Applications

Low side load switch
Level shift circuits
DC-DC converters
Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

What is the maximum drain-to-source voltage of the 2N7002E MOSFET?
The maximum drain-to-source voltage (V_DSS) is 60 V.
What is the typical on-resistance (R_DS(on)) of the 2N7002E?
The typical on-resistance (R_DS(on)) at V_GS = 4.5 V is 2.5 Ω.
What are the key applications of the 2N7002E MOSFET?
The 2N7002E is used in low side load switches, level shift circuits, DC-DC converters, and various portable applications.
Is the 2N7002E MOSFET RoHS compliant?
What package type does the 2N7002E come in?
The 2N7002E comes in a small footprint SOT-23 surface mount package.
What is the maximum drain current of the 2N7002E?
The maximum drain current (I_D) is 310 mA at steady state conditions (TA = 25°C).
Is the 2N7002E suitable for automotive applications?
What technology is used in the 2N7002E MOSFET?
The 2N7002E uses trench technology to enhance its performance.
What is the gate-to-source voltage range for the 2N7002E?
The gate-to-source voltage (V_GS) range is ±20 V.
What is the threshold voltage range of the 2N7002E?
The threshold voltage (V_GS(th)) range is from 0.8 to 3.0 V.

In Stock

UnitPrice: $0.24

Quantity: 3,367

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Part Number	2N7002ET1G	2N7002WT1G	2N7002KT1G	2N7002ET7G	2N7002LT1G	2N7002ET3G
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Active	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V	60 V	60 V	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)	310mA (Ta)	320mA (Ta)	260mA (Ta)	115mA (Tc)	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V	5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 240mA, 10V	1.6Ohm @ 500mA, 10V	1.6Ohm @ 500mA, 10V	2.5Ohm @ 240mA, 10V	7.5Ohm @ 500mA, 10V	2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.81 nC @ 5 V	0.7 nC @ 4.5 V	0.7 nC @ 4.5 V	0.81 nC @ 5 V	-	0.81 nC @ 5 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	26.7 pF @ 25 V	24.5 pF @ 20 V	24.5 pF @ 20 V	40 pF @ 25 V	50 pF @ 25 V	26.7 pF @ 25 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	300mW (Tj)	280mW (Tj)	350mW (Ta)	300mW (Tj)	225mW (Ta)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)	SC-70-3 (SOT323)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3	SC-70, SOT-323	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.81 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	26.7 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	300mW (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

onsemi 2N7002ET1G

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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