onsemi 2N7002ET7G

Manufacturer No:: 2N7002ET7G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 60V 260MA SOT23-3
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Product Introduction

Overview

The 2N7002ET7G is a small signal MOSFET produced by onsemi, designed for a variety of applications requiring low power and high efficiency. This N-channel MOSFET is packaged in a SOT-23 surface mount package, making it ideal for space-constrained designs. It features onsemi's PowerTrench technology, which enhances performance by reducing on-resistance and increasing switching speed.

Key Specifications

Parameter	Symbol	Value	Unit
Drain-to-Source Voltage	V_DSS	60	V
Gate-to-Source Voltage	V_GS	±20	V
Drain Current (Steady State)	I_D	310	mA
On-Resistance (Max @ V_GS = 4.5 V)	R_DS(on)	3.0 Ω	Ω
On-Resistance (Max @ V_GS = 10 V)	R_DS(on)	2.5 Ω	Ω
Threshold Voltage	V_GS(th)	2.5 V	V
Package Type		SOT-23 (Pb-Free)

Key Features

Low R_DS(on) for reduced power loss
Small footprint surface mount package (SOT-23)
Trench technology for improved performance
AEC-Q101 qualified and PPAP capable for automotive and other critical applications
Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

Low side load switch
Level shift circuits
DC-DC converters
Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

What is the maximum drain-to-source voltage of the 2N7002ET7G MOSFET?
The maximum drain-to-source voltage (V_DSS) is 60 V.
What is the maximum gate-to-source voltage of the 2N7002ET7G MOSFET?
The maximum gate-to-source voltage (V_GS) is ±20 V.
What is the maximum drain current of the 2N7002ET7G MOSFET?
The maximum drain current (I_D) is 310 mA.
What is the on-resistance of the 2N7002ET7G MOSFET at V_GS = 4.5 V?
The on-resistance (R_DS(on)) at V_GS = 4.5 V is 3.0 Ω.
What is the on-resistance of the 2N7002ET7G MOSFET at V_GS = 10 V?
The on-resistance (R_DS(on)) at V_GS = 10 V is 2.5 Ω.
What is the threshold voltage of the 2N7002ET7G MOSFET?
The threshold voltage (V_GS(th)) is approximately 2.5 V.
Is the 2N7002ET7G MOSFET RoHS compliant?
What are some common applications of the 2N7002ET7G MOSFET?
What package type does the 2N7002ET7G MOSFET use?
The 2N7002ET7G MOSFET is packaged in a SOT-23 (Pb-Free) surface mount package.
Is the 2N7002ET7G MOSFET suitable for automotive applications?

In Stock

UnitPrice: $0.22

Quantity: 3,063

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Same Series

Part Number	2N7002ET7G	2N7002KT7G	2N7002LT7G	2N7002ET1G	2N7002ET3G
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V	60 V	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)	380mA (Ta)	115mA (Tc)	260mA (Ta)	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	5V, 10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 240mA, 10V	1.6Ohm @ 500mA, 10V	7.5Ohm @ 500mA, 10V	2.5Ohm @ 240mA, 10V	2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.3V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.81 nC @ 5 V	0.7 nC @ 4.5 V	-	0.81 nC @ 5 V	0.81 nC @ 5 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 25 V	45 pF @ 20 V	50 pF @ 25 V	26.7 pF @ 25 V	26.7 pF @ 25 V
FET Feature	-	-	-	-	-
Power Dissipation (Max)	300mW (Tj)	300mW (Ta)	225mW (Ta)	300mW (Tj)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.81 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	40 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	300mW (Tj)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

onsemi 2N7002ET7G

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

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