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2N7002ET7G
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onsemi 2N7002ET7G

Manufacturer No:
2N7002ET7G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 260MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 2N7002ET7G is a small signal MOSFET produced by onsemi, designed for a variety of applications requiring low power and high efficiency. This N-channel MOSFET is packaged in a SOT-23 surface mount package, making it ideal for space-constrained designs. It features onsemi's PowerTrench technology, which enhances performance by reducing on-resistance and increasing switching speed.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Steady State) ID 310 mA
On-Resistance (Max @ VGS = 4.5 V) RDS(on) 3.0 Ω Ω
On-Resistance (Max @ VGS = 10 V) RDS(on) 2.5 Ω Ω
Threshold Voltage VGS(th) 2.5 V V
Package Type SOT-23 (Pb-Free)

Key Features

  • Low RDS(on) for reduced power loss
  • Small footprint surface mount package (SOT-23)
  • Trench technology for improved performance
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-to-source voltage of the 2N7002ET7G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the maximum gate-to-source voltage of the 2N7002ET7G MOSFET?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  3. What is the maximum drain current of the 2N7002ET7G MOSFET?

    The maximum drain current (ID) is 310 mA.

  4. What is the on-resistance of the 2N7002ET7G MOSFET at VGS = 4.5 V?

    The on-resistance (RDS(on)) at VGS = 4.5 V is 3.0 Ω.

  5. What is the on-resistance of the 2N7002ET7G MOSFET at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 2.5 Ω.

  6. What is the threshold voltage of the 2N7002ET7G MOSFET?

    The threshold voltage (VGS(th)) is approximately 2.5 V.

  7. Is the 2N7002ET7G MOSFET RoHS compliant?
  8. What are some common applications of the 2N7002ET7G MOSFET?
  9. What package type does the 2N7002ET7G MOSFET use?

    The 2N7002ET7G MOSFET is packaged in a SOT-23 (Pb-Free) surface mount package.

  10. Is the 2N7002ET7G MOSFET suitable for automotive applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.81 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002ET7G 2N7002KT7G 2N7002LT7G 2N7002ET1G 2N7002ET3G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) 380mA (Ta) 115mA (Tc) 260mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V 0.7 nC @ 4.5 V - 0.81 nC @ 5 V 0.81 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 25 V 45 pF @ 20 V 50 pF @ 25 V 26.7 pF @ 25 V 26.7 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 300mW (Tj) 300mW (Ta) 225mW (Ta) 300mW (Tj) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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