2N7002ET3G
  • Share:

onsemi 2N7002ET3G

Manufacturer No:
2N7002ET3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 260MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002ET3G is a small signal, single N-channel MOSFET produced by onsemi. It is designed for a variety of applications requiring low on-resistance and a small footprint. This device is packaged in a SOT-23 surface mount package, making it suitable for space-constrained designs. The 2N7002ET3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Steady State, TA = 25°C) ID 310 mA
Drain Current (Steady State, TA = 85°C) ID 220 mA
Power Dissipation (Steady State) PD 300 mW
Pulsed Drain Current (tp = 10 μs) IDM 1.2 A
Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 °C
Source Current (Body Diode) IS 300 mA
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 417 °C/W

Key Features

  • Low RDS(on)
  • Small footprint surface mount package (SOT-23)
  • Trench technology for improved performance
  • S prefix for automotive and other applications requiring unique site and control change requirements
  • AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the 2N7002ET3G?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the maximum gate-to-source voltage (VGS) for the 2N7002ET3G?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  3. What is the steady-state drain current (ID) at TA = 25°C?

    The steady-state drain current (ID) at TA = 25°C is 310 mA.

  4. What is the operating junction and storage temperature range for the 2N7002ET3G?

    The operating junction and storage temperature range is -55 to +150 °C.

  5. Is the 2N7002ET3G RoHS compliant?

    Yes, the 2N7002ET3G is Pb-free, halogen-free, and RoHS compliant.

  6. What are some common applications of the 2N7002ET3G?

    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.

  7. What is the junction-to-ambient thermal resistance (RθJA) of the 2N7002ET3G?

    The junction-to-ambient thermal resistance (RθJA) is 417 °C/W.

  8. Is the 2N7002ET3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What package type is the 2N7002ET3G available in?

    The 2N7002ET3G is available in a SOT-23 surface mount package.

  10. What is the maximum pulsed drain current (IDM) for the 2N7002ET3G?

    The maximum pulsed drain current (IDM) is 1.2 A for tp = 10 μs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.81 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:26.7 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
550

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number 2N7002ET3G 2N7002LT3G 2N7002ET7G 2N7002KT3G 2N7002WT3G 2N7002ET1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) 115mA (Tc) 260mA (Ta) 320mA (Ta) 310mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V - 0.81 nC @ 5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 0.81 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 26.7 pF @ 25 V 50 pF @ 25 V 40 pF @ 25 V 24.5 pF @ 20 V 24.5 pF @ 20 V 26.7 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 300mW (Tj) 225mW (Ta) 300mW (Tj) 350mW (Ta) 280mW (Tj) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3