Overview
The 2N7002ET3G is a small signal, single N-channel MOSFET produced by onsemi. It is designed for a variety of applications requiring low on-resistance and a small footprint. This device is packaged in a SOT-23 surface mount package, making it suitable for space-constrained designs. The 2N7002ET3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 60 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Drain Current (Steady State, TA = 25°C) | ID | 310 | mA |
Drain Current (Steady State, TA = 85°C) | ID | 220 | mA |
Power Dissipation (Steady State) | PD | 300 | mW |
Pulsed Drain Current (tp = 10 μs) | IDM | 1.2 | A |
Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Source Current (Body Diode) | IS | 300 | mA |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 417 | °C/W |
Key Features
- Low RDS(on)
- Small footprint surface mount package (SOT-23)
- Trench technology for improved performance
- S prefix for automotive and other applications requiring unique site and control change requirements
- AEC-Q101 qualified and PPAP capable
- Pb-free, halogen-free, and RoHS compliant
Applications
- Low side load switch
- Level shift circuits
- DC-DC converters
- Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the 2N7002ET3G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the maximum gate-to-source voltage (VGS) for the 2N7002ET3G?
The maximum gate-to-source voltage (VGS) is ±20 V.
- What is the steady-state drain current (ID) at TA = 25°C?
The steady-state drain current (ID) at TA = 25°C is 310 mA.
- What is the operating junction and storage temperature range for the 2N7002ET3G?
The operating junction and storage temperature range is -55 to +150 °C.
- Is the 2N7002ET3G RoHS compliant?
Yes, the 2N7002ET3G is Pb-free, halogen-free, and RoHS compliant.
- What are some common applications of the 2N7002ET3G?
Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.
- What is the junction-to-ambient thermal resistance (RθJA) of the 2N7002ET3G?
The junction-to-ambient thermal resistance (RθJA) is 417 °C/W.
- Is the 2N7002ET3G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What package type is the 2N7002ET3G available in?
The 2N7002ET3G is available in a SOT-23 surface mount package.
- What is the maximum pulsed drain current (IDM) for the 2N7002ET3G?
The maximum pulsed drain current (IDM) is 1.2 A for tp = 10 μs.