2N7002ET3G
  • Share:

onsemi 2N7002ET3G

Manufacturer No:
2N7002ET3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 260MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002ET3G is a small signal, single N-channel MOSFET produced by onsemi. It is designed for a variety of applications requiring low on-resistance and a small footprint. This device is packaged in a SOT-23 surface mount package, making it suitable for space-constrained designs. The 2N7002ET3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Steady State, TA = 25°C) ID 310 mA
Drain Current (Steady State, TA = 85°C) ID 220 mA
Power Dissipation (Steady State) PD 300 mW
Pulsed Drain Current (tp = 10 μs) IDM 1.2 A
Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 °C
Source Current (Body Diode) IS 300 mA
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 417 °C/W

Key Features

  • Low RDS(on)
  • Small footprint surface mount package (SOT-23)
  • Trench technology for improved performance
  • S prefix for automotive and other applications requiring unique site and control change requirements
  • AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the 2N7002ET3G?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the maximum gate-to-source voltage (VGS) for the 2N7002ET3G?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  3. What is the steady-state drain current (ID) at TA = 25°C?

    The steady-state drain current (ID) at TA = 25°C is 310 mA.

  4. What is the operating junction and storage temperature range for the 2N7002ET3G?

    The operating junction and storage temperature range is -55 to +150 °C.

  5. Is the 2N7002ET3G RoHS compliant?

    Yes, the 2N7002ET3G is Pb-free, halogen-free, and RoHS compliant.

  6. What are some common applications of the 2N7002ET3G?

    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.

  7. What is the junction-to-ambient thermal resistance (RθJA) of the 2N7002ET3G?

    The junction-to-ambient thermal resistance (RθJA) is 417 °C/W.

  8. Is the 2N7002ET3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What package type is the 2N7002ET3G available in?

    The 2N7002ET3G is available in a SOT-23 surface mount package.

  10. What is the maximum pulsed drain current (IDM) for the 2N7002ET3G?

    The maximum pulsed drain current (IDM) is 1.2 A for tp = 10 μs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.81 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:26.7 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
550

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002ET3G 2N7002LT3G 2N7002ET7G 2N7002KT3G 2N7002WT3G 2N7002ET1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) 115mA (Tc) 260mA (Ta) 320mA (Ta) 310mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V - 0.81 nC @ 5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 0.81 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 26.7 pF @ 25 V 50 pF @ 25 V 40 pF @ 25 V 24.5 pF @ 20 V 24.5 pF @ 20 V 26.7 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 300mW (Tj) 225mW (Ta) 300mW (Tj) 350mW (Ta) 280mW (Tj) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN