2N7002ET3G
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onsemi 2N7002ET3G

Manufacturer No:
2N7002ET3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 260MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002ET3G is a small signal, single N-channel MOSFET produced by onsemi. It is designed for a variety of applications requiring low on-resistance and a small footprint. This device is packaged in a SOT-23 surface mount package, making it suitable for space-constrained designs. The 2N7002ET3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Steady State, TA = 25°C) ID 310 mA
Drain Current (Steady State, TA = 85°C) ID 220 mA
Power Dissipation (Steady State) PD 300 mW
Pulsed Drain Current (tp = 10 μs) IDM 1.2 A
Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 °C
Source Current (Body Diode) IS 300 mA
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 417 °C/W

Key Features

  • Low RDS(on)
  • Small footprint surface mount package (SOT-23)
  • Trench technology for improved performance
  • S prefix for automotive and other applications requiring unique site and control change requirements
  • AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the 2N7002ET3G?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the maximum gate-to-source voltage (VGS) for the 2N7002ET3G?

    The maximum gate-to-source voltage (VGS) is ±20 V.

  3. What is the steady-state drain current (ID) at TA = 25°C?

    The steady-state drain current (ID) at TA = 25°C is 310 mA.

  4. What is the operating junction and storage temperature range for the 2N7002ET3G?

    The operating junction and storage temperature range is -55 to +150 °C.

  5. Is the 2N7002ET3G RoHS compliant?

    Yes, the 2N7002ET3G is Pb-free, halogen-free, and RoHS compliant.

  6. What are some common applications of the 2N7002ET3G?

    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.

  7. What is the junction-to-ambient thermal resistance (RθJA) of the 2N7002ET3G?

    The junction-to-ambient thermal resistance (RθJA) is 417 °C/W.

  8. Is the 2N7002ET3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What package type is the 2N7002ET3G available in?

    The 2N7002ET3G is available in a SOT-23 surface mount package.

  10. What is the maximum pulsed drain current (IDM) for the 2N7002ET3G?

    The maximum pulsed drain current (IDM) is 1.2 A for tp = 10 μs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.81 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:26.7 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002ET3G 2N7002LT3G 2N7002ET7G 2N7002KT3G 2N7002WT3G 2N7002ET1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) 115mA (Tc) 260mA (Ta) 320mA (Ta) 310mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V 7.5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V - 0.81 nC @ 5 V 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 0.81 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 26.7 pF @ 25 V 50 pF @ 25 V 40 pF @ 25 V 24.5 pF @ 20 V 24.5 pF @ 20 V 26.7 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 300mW (Tj) 225mW (Ta) 300mW (Tj) 350mW (Ta) 280mW (Tj) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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