2N7002KT3G
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onsemi 2N7002KT3G

Manufacturer No:
2N7002KT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT23-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The 2N7002KT3G is a small signal, single N-channel MOSFET produced by onsemi. This device is designed for a variety of applications requiring low on-resistance and high switching speeds. It is packaged in a SOT-23 surface mount package, making it suitable for space-constrained designs. The 2N7002KT3G is also ESD protected, Pb-free, halogen-free, and RoHS compliant, ensuring environmental and regulatory compliance.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Drain Current (ID)380mA
Gate Threshold Voltage (VGS(TH))1.0 - 2.3V
On Resistance (RDS(on)) at VGS = 10 V, ID = 500 mA1.19 - 1.6Ω
On Resistance (RDS(on)) at VGS = 4.5 V, ID = 200 mA1.33 - 2.5Ω
Forward Transconductance (gFS) at VDS = 5 V, ID = 200 mA530mS
Input Capacitance (CISS) at VGS = 0 V, f = 1 MHz, VDS = 20 V24.5 - 45pF
Output Capacitance (COSS)4.2pF
Junction-to-Ambient Thermal Resistance (RJA) - Steady State300°C/W

Key Features

  • ESD protected
  • Low on-resistance (RDS(on))
  • Surface mount SOT-23 package
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002KT3G? The maximum drain-source voltage is 60 V.
  2. What is the maximum drain current (ID) of the 2N7002KT3G? The maximum drain current is 380 mA.
  3. What is the typical gate threshold voltage (VGS(TH)) of the 2N7002KT3G? The typical gate threshold voltage ranges from 1.0 to 2.3 V.
  4. What is the on-resistance (RDS(on)) of the 2N7002KT3G at VGS = 10 V and ID = 500 mA? The on-resistance is between 1.19 and 1.6 Ω.
  5. Is the 2N7002KT3G ESD protected? Yes, the device is ESD protected.
  6. What package type is the 2N7002KT3G available in? It is available in a SOT-23 surface mount package.
  7. Is the 2N7002KT3G compliant with automotive standards? Yes, it is AEC-Q101 qualified and PPAP capable.
  8. What are some common applications of the 2N7002KT3G? Common applications include low side load switches, level shift circuits, DC-DC converters, and portable electronics like DSC, PDA, and cell phones.
  9. Is the 2N7002KT3G environmentally friendly? Yes, it is Pb-free, halogen-free, and RoHS compliant.
  10. What is the junction-to-ambient thermal resistance (RJA) of the 2N7002KT3G? The junction-to-ambient thermal resistance is 300 °C/W in steady state conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24.5 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002KT1G
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
2V7002KT1G
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23

Similar Products

Part Number 2N7002KT3G 2N7002KT7G 2N7002LT3G 2N7002WT3G 2N7002ET3G 2N7002KT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) 380mA (Ta) 115mA (Tc) 310mA (Ta) 260mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V - 0.7 nC @ 4.5 V 0.81 nC @ 5 V 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24.5 pF @ 20 V 45 pF @ 20 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V 24.5 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 350mW (Ta) 300mW (Ta) 225mW (Ta) 280mW (Tj) 300mW (Tj) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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