2N7002KT3G
  • Share:

onsemi 2N7002KT3G

Manufacturer No:
2N7002KT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KT3G is a small signal, single N-channel MOSFET produced by onsemi. This device is designed for a variety of applications requiring low on-resistance and high switching speeds. It is packaged in a SOT-23 surface mount package, making it suitable for space-constrained designs. The 2N7002KT3G is also ESD protected, Pb-free, halogen-free, and RoHS compliant, ensuring environmental and regulatory compliance.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Drain Current (ID)380mA
Gate Threshold Voltage (VGS(TH))1.0 - 2.3V
On Resistance (RDS(on)) at VGS = 10 V, ID = 500 mA1.19 - 1.6Ω
On Resistance (RDS(on)) at VGS = 4.5 V, ID = 200 mA1.33 - 2.5Ω
Forward Transconductance (gFS) at VDS = 5 V, ID = 200 mA530mS
Input Capacitance (CISS) at VGS = 0 V, f = 1 MHz, VDS = 20 V24.5 - 45pF
Output Capacitance (COSS)4.2pF
Junction-to-Ambient Thermal Resistance (RJA) - Steady State300°C/W

Key Features

  • ESD protected
  • Low on-resistance (RDS(on))
  • Surface mount SOT-23 package
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones

Q & A

  1. What is the maximum drain-source voltage (VDS) of the 2N7002KT3G? The maximum drain-source voltage is 60 V.
  2. What is the maximum drain current (ID) of the 2N7002KT3G? The maximum drain current is 380 mA.
  3. What is the typical gate threshold voltage (VGS(TH)) of the 2N7002KT3G? The typical gate threshold voltage ranges from 1.0 to 2.3 V.
  4. What is the on-resistance (RDS(on)) of the 2N7002KT3G at VGS = 10 V and ID = 500 mA? The on-resistance is between 1.19 and 1.6 Ω.
  5. Is the 2N7002KT3G ESD protected? Yes, the device is ESD protected.
  6. What package type is the 2N7002KT3G available in? It is available in a SOT-23 surface mount package.
  7. Is the 2N7002KT3G compliant with automotive standards? Yes, it is AEC-Q101 qualified and PPAP capable.
  8. What are some common applications of the 2N7002KT3G? Common applications include low side load switches, level shift circuits, DC-DC converters, and portable electronics like DSC, PDA, and cell phones.
  9. Is the 2N7002KT3G environmentally friendly? Yes, it is Pb-free, halogen-free, and RoHS compliant.
  10. What is the junction-to-ambient thermal resistance (RJA) of the 2N7002KT3G? The junction-to-ambient thermal resistance is 300 °C/W in steady state conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24.5 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
353

Please send RFQ , we will respond immediately.

Same Series
2N7002KT1G
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
2V7002KT1G
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23

Similar Products

Part Number 2N7002KT3G 2N7002KT7G 2N7002LT3G 2N7002WT3G 2N7002ET3G 2N7002KT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) 380mA (Ta) 115mA (Tc) 310mA (Ta) 260mA (Ta) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V - 0.7 nC @ 4.5 V 0.81 nC @ 5 V 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24.5 pF @ 20 V 45 pF @ 20 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V 24.5 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 350mW (Ta) 300mW (Ta) 225mW (Ta) 280mW (Tj) 300mW (Tj) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE