2N7002LT3G
  • Share:

onsemi 2N7002LT3G

Manufacturer No:
2N7002LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT3G is an N-Channel, small signal MOSFET produced by onsemi. This device is packaged in a SOT-23 case and is designed for a variety of applications requiring low power consumption and high reliability. The 2N7002LT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS60Vdc
Drain-Gate VoltageVDGR60Vdc
Continuous Drain Current at TC = 25°CID±115mA
Continuous Drain Current at TC = 100°CID±75mA
Pulsed Drain CurrentIDM±800mA
Gate-Source Voltage - ContinuousVGS±20Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs)VGSM±40Vpk
Drain-Source Breakdown Voltage (VGS = 0, ID = 10 μA)V(BR)DSS60Vdc
On-Resistance (RDS(on)) at VGS = 10 V, ID = 500 mARDS(on)7.5 Ω

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Low on-resistance (RDS(on)) of 7.5 Ω at VGS = 10 V, ID = 500 mA.
  • High drain-source breakdown voltage (V(BR)DSS) of 60 V.
  • Continuous drain current of ±115 mA at TC = 25°C.
  • SOT-23 package for compact design.

Applications

The 2N7002LT3G is versatile and can be used in a variety of applications, including:

  • Automotive systems due to its AEC-Q101 qualification.
  • General-purpose switching and amplification.
  • Low power DC-DC converters.
  • Audio and video switching.
  • Power management circuits.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002LT3G?
    The maximum drain-source voltage (VDSS) is 60 Vdc.
  2. Is the 2N7002LT3G RoHS compliant?
    Yes, the 2N7002LT3G is Pb-free, halogen-free, and RoHS compliant.
  3. What is the continuous drain current at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is ±115 mA.
  4. What is the on-resistance (RDS(on)) at VGS = 10 V, ID = 500 mA?
    The on-resistance (RDS(on)) is 7.5 Ω at VGS = 10 V, ID = 500 mA.
  5. Is the 2N7002LT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  6. What is the package type of the 2N7002LT3G?
    The package type is SOT-23.
  7. What is the maximum gate-source voltage?
    The maximum continuous gate-source voltage (VGS) is ±20 Vdc.
  8. What is the non-repetitive gate-source voltage (VGSM)?
    The non-repetitive gate-source voltage (VGSM) is ±40 Vpk for tp ≤ 50 μs.
  9. What is the drain-source breakdown voltage (V(BR)DSS)?
    The drain-source breakdown voltage (V(BR)DSS) is 60 Vdc.
  10. Is the 2N7002LT3G available in tape and reel packaging?
    Yes, it is available in tape and reel packaging with various quantities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.26
806

Please send RFQ , we will respond immediately.

Same Series
2N7002LT1G
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT1G
2V7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT3G
2V7002LT3G
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002LT3G 2N7002LT7G 2N7002WT3G 2N7002ET3G 2N7002KT3G 2N7002LT1G 2N7002LT3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 310mA (Ta) 260mA (Ta) 320mA (Ta) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.7 nC @ 4.5 V 0.81 nC @ 5 V 0.7 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V 24.5 pF @ 20 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 280mW (Tj) 300mW (Tj) 350mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP