2N7002LT3G
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onsemi 2N7002LT3G

Manufacturer No:
2N7002LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT3G is an N-Channel, small signal MOSFET produced by onsemi. This device is packaged in a SOT-23 case and is designed for a variety of applications requiring low power consumption and high reliability. The 2N7002LT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS60Vdc
Drain-Gate VoltageVDGR60Vdc
Continuous Drain Current at TC = 25°CID±115mA
Continuous Drain Current at TC = 100°CID±75mA
Pulsed Drain CurrentIDM±800mA
Gate-Source Voltage - ContinuousVGS±20Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs)VGSM±40Vpk
Drain-Source Breakdown Voltage (VGS = 0, ID = 10 μA)V(BR)DSS60Vdc
On-Resistance (RDS(on)) at VGS = 10 V, ID = 500 mARDS(on)7.5 Ω

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Low on-resistance (RDS(on)) of 7.5 Ω at VGS = 10 V, ID = 500 mA.
  • High drain-source breakdown voltage (V(BR)DSS) of 60 V.
  • Continuous drain current of ±115 mA at TC = 25°C.
  • SOT-23 package for compact design.

Applications

The 2N7002LT3G is versatile and can be used in a variety of applications, including:

  • Automotive systems due to its AEC-Q101 qualification.
  • General-purpose switching and amplification.
  • Low power DC-DC converters.
  • Audio and video switching.
  • Power management circuits.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002LT3G?
    The maximum drain-source voltage (VDSS) is 60 Vdc.
  2. Is the 2N7002LT3G RoHS compliant?
    Yes, the 2N7002LT3G is Pb-free, halogen-free, and RoHS compliant.
  3. What is the continuous drain current at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is ±115 mA.
  4. What is the on-resistance (RDS(on)) at VGS = 10 V, ID = 500 mA?
    The on-resistance (RDS(on)) is 7.5 Ω at VGS = 10 V, ID = 500 mA.
  5. Is the 2N7002LT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  6. What is the package type of the 2N7002LT3G?
    The package type is SOT-23.
  7. What is the maximum gate-source voltage?
    The maximum continuous gate-source voltage (VGS) is ±20 Vdc.
  8. What is the non-repetitive gate-source voltage (VGSM)?
    The non-repetitive gate-source voltage (VGSM) is ±40 Vpk for tp ≤ 50 μs.
  9. What is the drain-source breakdown voltage (V(BR)DSS)?
    The drain-source breakdown voltage (V(BR)DSS) is 60 Vdc.
  10. Is the 2N7002LT3G available in tape and reel packaging?
    Yes, it is available in tape and reel packaging with various quantities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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2V7002LT3G
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Similar Products

Part Number 2N7002LT3G 2N7002LT7G 2N7002WT3G 2N7002ET3G 2N7002KT3G 2N7002LT1G 2N7002LT3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 310mA (Ta) 260mA (Ta) 320mA (Ta) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.7 nC @ 4.5 V 0.81 nC @ 5 V 0.7 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V 24.5 pF @ 20 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 280mW (Tj) 300mW (Tj) 350mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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