2N7002LT3G
  • Share:

onsemi 2N7002LT3G

Manufacturer No:
2N7002LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002LT3G is an N-Channel, small signal MOSFET produced by onsemi. This device is packaged in a SOT-23 case and is designed for a variety of applications requiring low power consumption and high reliability. The 2N7002LT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDSS60Vdc
Drain-Gate VoltageVDGR60Vdc
Continuous Drain Current at TC = 25°CID±115mA
Continuous Drain Current at TC = 100°CID±75mA
Pulsed Drain CurrentIDM±800mA
Gate-Source Voltage - ContinuousVGS±20Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs)VGSM±40Vpk
Drain-Source Breakdown Voltage (VGS = 0, ID = 10 μA)V(BR)DSS60Vdc
On-Resistance (RDS(on)) at VGS = 10 V, ID = 500 mARDS(on)7.5 Ω

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • Low on-resistance (RDS(on)) of 7.5 Ω at VGS = 10 V, ID = 500 mA.
  • High drain-source breakdown voltage (V(BR)DSS) of 60 V.
  • Continuous drain current of ±115 mA at TC = 25°C.
  • SOT-23 package for compact design.

Applications

The 2N7002LT3G is versatile and can be used in a variety of applications, including:

  • Automotive systems due to its AEC-Q101 qualification.
  • General-purpose switching and amplification.
  • Low power DC-DC converters.
  • Audio and video switching.
  • Power management circuits.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002LT3G?
    The maximum drain-source voltage (VDSS) is 60 Vdc.
  2. Is the 2N7002LT3G RoHS compliant?
    Yes, the 2N7002LT3G is Pb-free, halogen-free, and RoHS compliant.
  3. What is the continuous drain current at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is ±115 mA.
  4. What is the on-resistance (RDS(on)) at VGS = 10 V, ID = 500 mA?
    The on-resistance (RDS(on)) is 7.5 Ω at VGS = 10 V, ID = 500 mA.
  5. Is the 2N7002LT3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  6. What is the package type of the 2N7002LT3G?
    The package type is SOT-23.
  7. What is the maximum gate-source voltage?
    The maximum continuous gate-source voltage (VGS) is ±20 Vdc.
  8. What is the non-repetitive gate-source voltage (VGSM)?
    The non-repetitive gate-source voltage (VGSM) is ±40 Vpk for tp ≤ 50 μs.
  9. What is the drain-source breakdown voltage (V(BR)DSS)?
    The drain-source breakdown voltage (V(BR)DSS) is 60 Vdc.
  10. Is the 2N7002LT3G available in tape and reel packaging?
    Yes, it is available in tape and reel packaging with various quantities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.26
806

Please send RFQ , we will respond immediately.

Same Series
2N7002LT1G
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT1G
2V7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT3G
2V7002LT3G
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002LT3G 2N7002LT7G 2N7002WT3G 2N7002ET3G 2N7002KT3G 2N7002LT1G 2N7002LT3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 115mA (Tc) 310mA (Ta) 260mA (Ta) 320mA (Ta) 115mA (Tc) 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.7 nC @ 4.5 V 0.81 nC @ 5 V 0.7 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 24.5 pF @ 20 V 26.7 pF @ 25 V 24.5 pF @ 20 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 280mW (Tj) 300mW (Tj) 350mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220