2V7002LT1G
  • Share:

onsemi 2V7002LT1G

Manufacturer No:
2V7002LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2V7002LT1G is a small signal N-Channel MOSFET produced by onsemi, designed for a variety of applications requiring low power consumption and high reliability. This device is part of the 2N7002L series, which is known for its robust performance and compliance with automotive and industrial standards. The 2V prefix indicates that this specific model meets unique site and control change requirements and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Drain Current - Continuous (TC = 25°C) ID ±115 mAdc
Drain Current - Continuous (TC = 100°C) ID ±75 mAdc
Drain Current - Pulsed IDM ±800 mAdc
Gate-Source Voltage - Continuous VGS ±20 Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) VGSM ±40 Vpk
Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) VGS(th) 1.0 - 2.5 Vdc
On-State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 mA
Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) 3.75 Vdc
Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) rDS(on) 7.5 Ohms
Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) gFS 80 mS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss 25 pF
Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss 5.0 pF
Turn-On Delay Time (VDD = 25 Vdc, ID = 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) td(on) 20 ns
Turn-Off Delay Time td(off) 40 ns
Diode Forward On-Voltage (IS = 115 mAdc, VGS = 0 V) VSD -1.5 Vdc
Source Current Continuous (Body Diode) IS -115 mAdc
Source Current Pulsed (Body Diode) ISM -800 mAdc

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and industrial standards for reliability and performance.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • High Drain-Source Voltage: Up to 60 Vdc, suitable for a wide range of applications.
  • Low On-State Resistance: rDS(on) of 7.5 Ohms at VGS = 10 V and ID = 500 mAdc.
  • High Forward Transconductance: gFS of 80 mS, indicating good switching characteristics.
  • Compact SOT-23 Package: Small footprint suitable for space-constrained designs.
  • Low Gate Threshold Voltage: VGS(th) of 1.0 to 2.5 Vdc, making it easy to drive.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Used in industrial control circuits, motor control, and power management systems.
  • Consumer Electronics: Applicable in consumer electronics for switching and power management functions.
  • Medical Devices: Can be used in medical devices that require low power consumption and high reliability.
  • General Purpose Switching: Ideal for general-purpose switching applications where low power and high efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the 2V7002LT1G MOSFET?

    The maximum drain-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current at 25°C for the 2V7002LT1G?

    The continuous drain current (ID) at 25°C is ±115 mAdc.

  3. Is the 2V7002LT1G Pb-Free and RoHS compliant?

    Yes, the 2V7002LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the typical on-state resistance of the 2V7002LT1G?

    The typical on-state resistance (rDS(on)) is 7.5 Ohms at VGS = 10 V and ID = 500 mAdc.

  5. What is the gate threshold voltage range for the 2V7002LT1G?

    The gate threshold voltage (VGS(th)) range is 1.0 to 2.5 Vdc.

  6. What is the package type of the 2V7002LT1G?

    The package type is SOT-23 (TO-236).

  7. Is the 2V7002LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  8. What is the maximum junction temperature for the 2V7002LT1G?

    The maximum junction temperature (TJ) is +150°C.

  9. What is the turn-on delay time for the 2V7002LT1G?

    The turn-on delay time (td(on)) is 20 ns.

  10. What is the diode forward on-voltage for the 2V7002LT1G?

    The diode forward on-voltage (VSD) is -1.5 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
336

Please send RFQ , we will respond immediately.

Same Series
2N7002LT1G
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT1G
2V7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT3G
2V7002LT3G
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2V7002LT1G 2V7002WT1G 2V7002LT3G 2V7002KT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 310mA (Ta) 115mA (Tc) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.7 nC @ 4.5 V - 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 24.5 pF @ 20 V 50 pF @ 25 V 24.5 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) 225mW (Ta) 280mW (Tj) 225mW (Ta) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR