2V7002LT1G
  • Share:

onsemi 2V7002LT1G

Manufacturer No:
2V7002LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2V7002LT1G is a small signal N-Channel MOSFET produced by onsemi, designed for a variety of applications requiring low power consumption and high reliability. This device is part of the 2N7002L series, which is known for its robust performance and compliance with automotive and industrial standards. The 2V prefix indicates that this specific model meets unique site and control change requirements and is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Drain Current - Continuous (TC = 25°C) ID ±115 mAdc
Drain Current - Continuous (TC = 100°C) ID ±75 mAdc
Drain Current - Pulsed IDM ±800 mAdc
Gate-Source Voltage - Continuous VGS ±20 Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) VGSM ±40 Vpk
Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) VGS(th) 1.0 - 2.5 Vdc
On-State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 mA
Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) 3.75 Vdc
Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) rDS(on) 7.5 Ohms
Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) gFS 80 mS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss 25 pF
Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss 5.0 pF
Turn-On Delay Time (VDD = 25 Vdc, ID = 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) td(on) 20 ns
Turn-Off Delay Time td(off) 40 ns
Diode Forward On-Voltage (IS = 115 mAdc, VGS = 0 V) VSD -1.5 Vdc
Source Current Continuous (Body Diode) IS -115 mAdc
Source Current Pulsed (Body Diode) ISM -800 mAdc

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and industrial standards for reliability and performance.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • High Drain-Source Voltage: Up to 60 Vdc, suitable for a wide range of applications.
  • Low On-State Resistance: rDS(on) of 7.5 Ohms at VGS = 10 V and ID = 500 mAdc.
  • High Forward Transconductance: gFS of 80 mS, indicating good switching characteristics.
  • Compact SOT-23 Package: Small footprint suitable for space-constrained designs.
  • Low Gate Threshold Voltage: VGS(th) of 1.0 to 2.5 Vdc, making it easy to drive.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Used in industrial control circuits, motor control, and power management systems.
  • Consumer Electronics: Applicable in consumer electronics for switching and power management functions.
  • Medical Devices: Can be used in medical devices that require low power consumption and high reliability.
  • General Purpose Switching: Ideal for general-purpose switching applications where low power and high efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the 2V7002LT1G MOSFET?

    The maximum drain-source voltage (VDSS) is 60 Vdc.

  2. What is the continuous drain current at 25°C for the 2V7002LT1G?

    The continuous drain current (ID) at 25°C is ±115 mAdc.

  3. Is the 2V7002LT1G Pb-Free and RoHS compliant?

    Yes, the 2V7002LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  4. What is the typical on-state resistance of the 2V7002LT1G?

    The typical on-state resistance (rDS(on)) is 7.5 Ohms at VGS = 10 V and ID = 500 mAdc.

  5. What is the gate threshold voltage range for the 2V7002LT1G?

    The gate threshold voltage (VGS(th)) range is 1.0 to 2.5 Vdc.

  6. What is the package type of the 2V7002LT1G?

    The package type is SOT-23 (TO-236).

  7. Is the 2V7002LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  8. What is the maximum junction temperature for the 2V7002LT1G?

    The maximum junction temperature (TJ) is +150°C.

  9. What is the turn-on delay time for the 2V7002LT1G?

    The turn-on delay time (td(on)) is 20 ns.

  10. What is the diode forward on-voltage for the 2V7002LT1G?

    The diode forward on-voltage (VSD) is -1.5 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
336

Please send RFQ , we will respond immediately.

Same Series
2N7002LT1G
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT1G
2V7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
2V7002LT3G
2V7002LT3G
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2V7002LT1G 2V7002WT1G 2V7002LT3G 2V7002KT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tc) 310mA (Ta) 115mA (Tc) 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.7 nC @ 4.5 V - 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 24.5 pF @ 20 V 50 pF @ 25 V 24.5 pF @ 20 V
FET Feature - - - -
Power Dissipation (Max) 225mW (Ta) 280mW (Tj) 225mW (Ta) 300mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN