Overview
The 2V7002KT1G is a small signal N-Channel MOSFET produced by onsemi. This device is part of the 2N7002K and 2V7002K series, which are known for their high performance and reliability. The 2V prefix indicates that this device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The MOSFET is housed in a SOT-23 package, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Drain Current (Steady State, 1 sq in Pad, TA = 25°C) | ID | 380 | mA |
| Drain Current (Steady State, Minimum Pad, TA = 25°C) | ID | 320 | mA |
| Power Dissipation (Steady State, 1 sq in Pad) | PD | 420 | mW |
| Pulsed Drain Current (tp = 10 μs) | IDM | 5.0 | A |
| Operating Junction and Storage Temperature Range | TJ, TSTG | −55 to +150 | °C |
| Gate-Source ESD Rating (HBM, Method 3015) | ESD | 2000 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | 1.19 - 1.6 | Ω |
| Gate Threshold Voltage (VGS = VDS, ID = 250 μA) | VGS(TH) | 1.0 - 2.3 | V |
Key Features
- ESD Protected
- Low RDS(on)
- Surface Mount Package (SOT-23)
- AEC-Q101 Qualified and PPAP Capable
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant
Applications
- Low Side Load Switch
- Level Shift Circuits
- DC-DC Converter
- Portable Applications (e.g., DSC, PDA, Cell Phone)
Q & A
- What is the maximum drain-to-source voltage of the 2V7002KT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the gate-to-source voltage range for the 2V7002KT1G?
The gate-to-source voltage (VGS) range is ±20 V.
- What is the steady-state drain current for the 2V7002KT1G at 25°C with a 1 sq in pad?
The steady-state drain current (ID) is 380 mA at 25°C with a 1 sq in pad.
- What is the power dissipation of the 2V7002KT1G with a 1 sq in pad?
The power dissipation (PD) is 420 mW with a 1 sq in pad.
- What is the pulsed drain current rating for the 2V7002KT1G?
The pulsed drain current (IDM) is 5.0 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range for the 2V7002KT1G?
The operating junction and storage temperature range (TJ, TSTG) is −55 to +150 °C.
- What is the gate-source ESD rating for the 2V7002KT1G?
The gate-source ESD rating is 2000 V (HBM, Method 3015).
- What is the typical on-resistance of the 2V7002KT1G?
The typical on-resistance (RDS(on)) is 1.19 - 1.6 Ω at VGS = 10 V and ID = 500 mA.
- What are the common applications of the 2V7002KT1G MOSFET?
Common applications include low side load switch, level shift circuits, DC-DC converter, and portable applications such as DSC, PDA, and cell phones.
- Is the 2V7002KT1G MOSFET RoHS compliant?
Yes, the 2V7002KT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
