Overview
The 2V7002WT1G is a small signal N-Channel MOSFET produced by onsemi. This device is part of the 2V7002W series and is designed for various applications requiring low power consumption and high reliability. It features a compact SC-70-3 (SOT-323) surface mount package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards. It is also Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| FET Type | N-Channel | |
| No of Channels | 1 | |
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Drain-Source On Resistance-Max (RDS(on)) | 1.6 | Ω |
| Rated Power Dissipation (PD) | 280 | mW |
| Gate Charge (Qg) | 0.7 | nC |
| Gate-Source Voltage-Max (Vgss) | 20 | V |
| Drain Current (ID) | 310 | mA |
| Turn-on Delay Time | 12.2 | ns |
| Turn-off Delay Time | 55.8 | ns |
| Rise Time | 9 | ns |
| Fall Time | 29 | ns |
| Operating Temp Range | -55°C to +150°C | |
| Gate Source Threshold | 2.5 | V |
| Technology | Si | |
| Input Capacitance | 24.5 | pF |
| Package Style | SOT-323 (SC-70) | |
| Mounting Method | Surface Mount |
Key Features
- ESD Protected: The 2V7002WT1G is designed with built-in ESD protection, enhancing its reliability in harsh environments.
- Low RDS(on): With a maximum drain-source on resistance of 1.6 Ω, this MOSFET offers efficient switching and low power loss.
- Small Footprint: The SC-70-3 (SOT-323) package is compact, making it suitable for space-constrained applications.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and industrial standards for reliability and quality.
- Pb-free, Halogen-free, and RoHS Compliant: Aligns with environmental regulations, ensuring sustainability.
Applications
- Low Side Load Switch: Ideal for switching low-side loads in various circuits.
- Level Shift Circuits: Used in level shifting applications where voltage translation is required.
- DC-DC Converters: Suitable for use in DC-DC converter circuits due to its low RDS(on) and high efficiency.
- Portable Applications: Commonly used in portable devices such as digital cameras, PDAs, cell phones, etc.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the 2V7002WT1G MOSFET?
The maximum drain-to-source voltage (Vdss) is 60 V.
- What is the typical drain-source on resistance (RDS(on)) of this MOSFET?
The typical drain-source on resistance (RDS(on)) is 1.6 Ω.
- What is the maximum drain current (ID) of the 2V7002WT1G?
The maximum drain current (ID) is 310 mA.
- What is the operating temperature range of this MOSFET?
The operating temperature range is -55°C to +150°C.
- Is the 2V7002WT1G ESD protected?
Yes, the 2V7002WT1G is ESD protected.
- What package style does the 2V7002WT1G come in?
The 2V7002WT1G comes in an SOT-323 (SC-70) package.
- Is the 2V7002WT1G RoHS compliant?
Yes, the 2V7002WT1G is RoHS compliant.
- What are some common applications of the 2V7002WT1G MOSFET?
Common applications include low side load switching, level shift circuits, DC-DC converters, and portable devices.
- What is the gate-source threshold voltage (VGS(TH)) of this MOSFET?
The gate-source threshold voltage (VGS(TH)) is typically 2.5 V.
- Is the 2V7002WT1G AEC-Q101 qualified?
Yes, the 2V7002WT1G is AEC-Q101 qualified and PPAP capable.
