Overview
The 2N7002WT3G is an N-channel enhancement mode field effect transistor (FET) produced by onsemi. This device is part of the 2N7002 series and is known for its low on-resistance, fast switching speed, and small footprint surface mount package. It is designed using onsemi's proprietary high cell density DMOS technology, which ensures rugged, reliable, and efficient performance. The 2N7002WT3G is particularly suited for low-voltage, low-current applications and is RoHS compliant, making it a versatile choice for various electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGR | 60 | V |
| Gate-Source Voltage (Continuous) | VGSS | ±20 | V |
| Gate-Source Voltage (Non-Repetitive, tp < 50 ms) | VGSS | ±40 | V |
| Maximum Drain Current (Continuous) | ID | 115 | mA |
| Maximum Drain Current (Pulsed) | ID | 800 | mA |
| Maximum Power Dissipation | PD | 200 | mW |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Gate Threshold Voltage | VGS(th) | 1 to 2.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | 1.2 to 7.5 | Ω |
| Input Capacitance | CISS | 20 to 50 | pF |
| Turn-On Delay Time | tD(ON) | 5.85 to 20 | ns |
| Turn-Off Delay Time | tD(OFF) | 12.5 to 20 | ns |
Key Features
- Low on-resistance (RDS(on))
- Low gate threshold voltage (VGS(th))
- Low input capacitance (CISS)
- Fast switching speed
- Low input/output leakage
- Ultra-small surface mount package (SC-70/SOT-323)
- Pb-free and RoHS compliant
- ESD protected
- AEC-Q101 qualified and PPAP capable for automotive applications
Applications
- Low side load switch
- Level shift circuits
- DC-DC converters
- Portable applications such as DSC, PDA, and cell phones
- Logic level translators
- High-speed line drivers
- Small servo motor control
- Power MOSFET gate drivers
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the 2N7002WT3G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the maximum continuous drain current (ID) of the 2N7002WT3G?
The maximum continuous drain current (ID) is 115 mA.
- What is the typical gate threshold voltage (VGS(th)) of the 2N7002WT3G?
The typical gate threshold voltage (VGS(th)) ranges from 1 to 2.5 V.
- What is the maximum power dissipation (PD) of the 2N7002WT3G?
The maximum power dissipation (PD) is 200 mW.
- Is the 2N7002WT3G RoHS compliant?
Yes, the 2N7002WT3G is Pb-free and RoHS compliant.
- What are the typical applications of the 2N7002WT3G?
The 2N7002WT3G is typically used in low side load switches, level shift circuits, DC-DC converters, portable applications, logic level translators, high-speed line drivers, small servo motor control, and power MOSFET gate drivers.
- What is the package type of the 2N7002WT3G?
The package type is SC-70/SOT-323.
- What is the operating temperature range of the 2N7002WT3G?
The operating temperature range is -55°C to +150°C.
- Is the 2N7002WT3G ESD protected?
Yes, the 2N7002WT3G is ESD protected.
- Is the 2N7002WT3G qualified for automotive applications?
Yes, the 2N7002WT3G is AEC-Q101 qualified and PPAP capable for automotive applications.
