Overview
The 2N7002WT1G is a small signal, N-Channel MOSFET produced by onsemi. This device is designed for low-power applications and is known for its compact surface mount package, making it ideal for space-constrained designs. The 2N7002WT1G is ESD protected, has a low on-resistance (RDS(on)), and is RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 60 | V |
| Drain Current | ID | - | - | 340 | mA |
| Gate Threshold Voltage | VGS(TH) | 1.0 | - | 2.5 | V |
| Drain-Source On Resistance | RDS(on) | 1.19 | - | 1.6 | Ω (VGS = 10 V, ID = 500 mA) |
| Forward Transconductance | gFS | - | 530 | - | mS (VDS = 5 V, ID = 200 mA) |
| Input Capacitance | CISS | - | 24.5 | - | pF (VGS = 0 V, f = 1 MHz, VDS = 20 V) |
| Turn-On Delay Time | td(ON) | - | 12.2 | - | ns (VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 Ω) |
Key Features
- ESD protected
- Low RDS(on)
- Small footprint surface mount package (SC-70/SOT-323)
- RoHS compliant, Pb-free, and halogen-free/BFR-free
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
Applications
- Low side load switch
- Level shift circuits
- DC-DC converters
- Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), and cell phones
Q & A
- What is the maximum drain-source voltage of the 2N7002WT1G?
The maximum drain-source voltage is 60 V. - What is the typical drain-source on resistance of the 2N7002WT1G?
The typical drain-source on resistance is 1.19 Ω when VGS = 10 V and ID = 500 mA. - Is the 2N7002WT1G ESD protected?
Yes, the 2N7002WT1G is ESD protected. - What package type does the 2N7002WT1G use?
The 2N7002WT1G uses a small footprint surface mount package (SC-70/SOT-323). - Is the 2N7002WT1G RoHS compliant?
Yes, the 2N7002WT1G is RoHS compliant, Pb-free, and halogen-free/BFR-free. - What are some common applications of the 2N7002WT1G?
Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications like DSC, PDA, and cell phones. - What is the forward transconductance of the 2N7002WT1G?
The forward transconductance is 530 mS when VDS = 5 V and ID = 200 mA. - What is the turn-on delay time of the 2N7002WT1G?
The turn-on delay time is 12.2 ns when VGS = 10 V, VDD = 25 V, ID = 500 mA, and RG = 25 Ω. - Is the 2N7002WT1G qualified for automotive applications?
Yes, the 2N7002WT1G is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements. - What is the input capacitance of the 2N7002WT1G?
The input capacitance is 24.5 pF when VGS = 0 V, f = 1 MHz, and VDS = 20 V.
