2N7002WST1G
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onsemi 2N7002WST1G

Manufacturer No:
2N7002WST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 0.115A SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002WST1G is a small signal, N-Channel MOSFET produced by onsemi. This device is designed for low-power applications and is known for its compact SC-70 (SOT-323) package. It is ESD protected and RoHS compliant, making it suitable for a variety of modern electronic designs. The MOSFET is AEC-Q101 qualified and PPAP capable, which ensures its reliability and performance in automotive and other demanding applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (V_DS)60V
Drain Current (I_D)340mA
Gate Threshold Voltage (V_GS(TH))1.0 - 2.5V
Drain-Source On Resistance (R_DS(on)) at V_GS = 10 V, I_D = 500 mA1.19 - 1.6Ω
Forward Transconductance (g_FS) at V_DS = 5 V, I_D = 200 mA530mS
Input Capacitance (C_ISS) at V_GS = 0 V, f = 1 MHz, V_DS = 20 V24.5pF
Output Capacitance (C_OSS)4.2pF
Reverse Transfer Capacitance (C_RSS)2.2pF
Total Gate Charge (Q_G(TOT)) at V_GS = 4.5 V, V_DS = 10 V; I_D = 200 mA0.7nC
Turn-On Delay Time (t_d(ON)) at V_GS = 10 V, V_DD = 25 V, I_D = 500 mA, R_G = 25 Ω12.2ns
Rise Time (t_r)9.0ns
Turn-Off Delay Time (t_d(OFF))55.8ns
Fall Time (t_f)29ns

Key Features

  • ESD protected
  • Low R_DS(on)
  • Small footprint surface mount package (SC-70/SOT-323)
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-free, halogen-free/BFR-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as digital still cameras (DSC), personal digital assistants (PDA), cell phones, etc.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002WST1G MOSFET?
    The maximum drain-source voltage is 60 V.
  2. What is the typical drain current of the 2N7002WST1G?
    The typical drain current is 340 mA.
  3. What is the gate threshold voltage range of the 2N7002WST1G?
    The gate threshold voltage range is 1.0 to 2.5 V.
  4. What is the on-resistance of the 2N7002WST1G at V_GS = 10 V and I_D = 500 mA?
    The on-resistance is typically between 1.19 and 1.6 Ω.
  5. Is the 2N7002WST1G ESD protected?
    Yes, the 2N7002WST1G is ESD protected.
  6. What package type does the 2N7002WST1G use?
    The 2N7002WST1G uses the SC-70 (SOT-323) package.
  7. Is the 2N7002WST1G RoHS compliant?
    Yes, the 2N7002WST1G is RoHS compliant.
  8. What are some common applications of the 2N7002WST1G?
    Common applications include low side load switches, level shift circuits, DC-DC converters, and portable applications such as DSC, PDA, and cell phones.
  9. Is the 2N7002WST1G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  10. What is the typical turn-on delay time of the 2N7002WST1G?
    The typical turn-on delay time is 12.2 ns.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3 (SOT323)
Package / Case:SC-70, SOT-323
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Similar Products

Part Number 2N7002WST1G 2N7002WT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs - 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.7 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 24.5 pF @ 20 V
FET Feature - -
Power Dissipation (Max) - 280mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323)
Package / Case SC-70, SOT-323 SC-70, SOT-323

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