STD2N95K5
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STMicroelectronics STD2N95K5

Manufacturer No:
STD2N95K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 950V 2A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD2N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh K5 technology. This technology is based on a proprietary vertical structure, enhancing the device's performance and reliability. The MOSFET is known for its high voltage rating and rugged avalanche characteristics, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)950 V
On-Resistance (Rds(on))4.2 Ω (typ.)
Drain Current (Id)2 A
Power Dissipation (Pd)45 W
Package TypeDPAK
ESD ProtectionZener-protected

Key Features

  • High voltage rating of 950 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 4.2 Ω (typ.), reducing energy losses.
  • Avalanche-rugged design for enhanced reliability and durability.
  • Zener protection for improved robustness against electrical surges.
  • MDmesh K5 technology for superior performance and efficiency.

Applications

The STD2N95K5 is designed for use in various high-power applications, including:

  • Power supplies and converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • High-voltage DC-DC converters.
  • Switch-mode power supplies.

Q & A

  1. What is the voltage rating of the STD2N95K5 MOSFET?
    The voltage rating of the STD2N95K5 MOSFET is 950 V.
  2. What is the typical on-resistance of the STD2N95K5?
    The typical on-resistance (Rds(on)) is 4.2 Ω.
  3. What is the maximum drain current of the STD2N95K5?
    The maximum drain current (Id) is 2 A.
  4. What package type is the STD2N95K5 available in?
    The STD2N95K5 is available in the DPAK package type.
  5. Does the STD2N95K5 have ESD protection?
    Yes, the STD2N95K5 is Zener-protected for improved robustness against electrical surges.
  6. What technology is used in the design of the STD2N95K5?
    The STD2N95K5 is designed using STMicroelectronics' MDmesh K5 technology.
  7. What are some common applications of the STD2N95K5?
    The STD2N95K5 is commonly used in power supplies, motor control systems, industrial automation, high-voltage DC-DC converters, and switch-mode power supplies.
  8. What is the power dissipation rating of the STD2N95K5?
    The power dissipation rating (Pd) of the STD2N95K5 is 45 W.
  9. Is the STD2N95K5 avalanche-rugged?
    Yes, the STD2N95K5 is designed with avalanche-rugged characteristics for enhanced reliability and durability.
  10. Where can I find detailed specifications for the STD2N95K5?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):30V
Input Capacitance (Ciss) (Max) @ Vds:105 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STF2N95K5
STF2N95K5
MOSFET N-CH 950V 2A TO220FP
STU2N95K5
STU2N95K5
MOSFET N-CH 950V 2A IPAK
STP2N95K5
STP2N95K5
MOSFET N-CH 950V 2A TO220

Similar Products

Part Number STD2N95K5 STD5N95K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1A, 10V 2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) 30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 105 pF @ 100 V 220 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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