Overview
The STP5NK50Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power switching applications. It is available in several package types, including TO-220, TO-220FP, I2PAK, DPAK, and IPAK, catering to different design and thermal management needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 4.4 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 2.7 | A |
| Pulsed Drain Current (IDM) | 17.6 | A |
| On-Resistance (RDS(on)) | 1.22 Ω (typ.) | Ω |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 500 | V |
| Turn-On Delay Time (td(on)) | - | ns |
| Rise Time (tr) | 10 | ns |
| Turn-Off Delay Time (td(off)) | 32 | ns |
| Fall Time (tf) | 15 | ns |
Key Features
- High-voltage N-channel Power MOSFET with 500 V drain-source voltage rating.
- Low on-resistance (RDS(on)) of 1.22 Ω (typ.) for efficient power handling.
- High continuous drain current of up to 4.4 A at 25 °C and 2.7 A at 100 °C.
- Pulsed drain current capability of up to 17.6 A.
- Zener-protected gate-source diode for enhanced ESD performance.
- Minimized gate charge for fast switching times.
- Very low intrinsic capacitance.
- 100% avalanche tested for reliability.
- Available in multiple package types: TO-220, TO-220FP, I2PAK, DPAK, and IPAK.
Applications
- Switching applications in power supplies, motor control, and power management systems.
- High-voltage DC-DC converters and power inverters.
- Industrial and automotive power electronics.
- Power amplifiers and audio amplifiers requiring high power handling.
Q & A
- What is the maximum drain-source voltage of the STP5NK50Z?
The maximum drain-source voltage (VDS) is 500 V.
- What is the typical on-resistance (RDS(on)) of the STP5NK50Z?
The typical on-resistance (RDS(on)) is 1.22 Ω.
- What are the continuous drain current ratings at 25 °C and 100 °C?
The continuous drain current (ID) is 4.4 A at 25 °C and 2.7 A at 100 °C.
- What is the pulsed drain current capability of the STP5NK50Z?
The pulsed drain current (IDM) is up to 17.6 A.
- What is the purpose of the built-in Zener diodes in the STP5NK50Z?
The built-in Zener diodes enhance the ESD performance and protect the device integrity, eliminating the need for additional external components.
- In which packages is the STP5NK50Z available?
The STP5NK50Z is available in TO-220, TO-220FP, I2PAK, DPAK, and IPAK packages.
- What are some typical applications for the STP5NK50Z?
Typical applications include switching power supplies, motor control, high-voltage DC-DC converters, and industrial and automotive power electronics.
- What is the significance of the SuperMESH™ technology used in the STP5NK50Z?
The SuperMESH™ technology optimizes the device for low on-resistance and high dv/dt capability, making it suitable for demanding applications.
- How does the STP5NK50Z handle avalanche conditions?
The device is 100% avalanche tested and has a single pulse avalanche energy (EAS) of 130 mJ, ensuring reliability under avalanche conditions.
- What are the switching times for the STP5NK50Z?
The turn-on delay time (td(on)) is typically 15 ns, rise time (tr) is 10 ns, turn-off delay time (td(off)) is 32 ns, and fall time (tf) is 15 ns.
