STW20N90K5
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STMicroelectronics STW20N90K5

Manufacturer No:
STW20N90K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 20A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW20N90K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure enhances the device's performance, making it suitable for a wide range of high-power applications. The MOSFET is packaged in a TO-247 package, which is known for its high power dissipation capabilities and thermal efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)900 V
On-Resistance (Rds(on))0.21 Ohm (typ.)
Drain Current (Id)20 A
PackageTO-247
TechnologyMDmesh™ K5

Key Features

  • High voltage rating of 900 V, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 0.21 Ohm, which minimizes power losses and enhances efficiency.
  • High drain current of 20 A, supporting demanding power requirements.
  • MDmesh™ K5 technology for improved performance and reliability.
  • TO-247 package for high power dissipation and thermal efficiency.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.
  • Industrial and automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the STW20N90K5? The voltage rating of the STW20N90K5 is 900 V.
  2. What is the typical on-resistance of the STW20N90K5? The typical on-resistance is 0.21 Ohm.
  3. What is the maximum drain current of the STW20N90K5? The maximum drain current is 20 A.
  4. In what package is the STW20N90K5 available? The STW20N90K5 is available in a TO-247 package.
  5. What technology is used in the STW20N90K5? The STW20N90K5 uses MDmesh™ K5 technology.
  6. What are some common applications for the STW20N90K5? Common applications include power supplies, motor control systems, high-power switching, and industrial/automotive systems.
  7. Why is the TO-247 package used for the STW20N90K5? The TO-247 package is used for its high power dissipation capabilities and thermal efficiency.
  8. How does the MDmesh™ K5 technology enhance the performance of the STW20N90K5? The MDmesh™ K5 technology improves the device's performance by reducing on-resistance and enhancing reliability.
  9. Is the STW20N90K5 suitable for automotive applications? While the STW20N90K5 itself is not specifically marked as automotive-grade, similar models in the MDmesh K5 series are available with automotive-grade specifications.
  10. What are the benefits of low on-resistance in the STW20N90K5? Low on-resistance minimizes power losses and enhances the overall efficiency of the system.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW20N90K5 STW20N95K5 STW21N90K5 STW40N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 950 V 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 17.5A (Tc) 18.5A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 10A, 10V 330mOhm @ 9A, 10V 299mOhm @ 9A, 10V 99mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V 43 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 1500 pF @ 100 V 1645 pF @ 100 V 3260 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 250W (Tc) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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