Overview
The CSD17501Q5A is a 30-V, N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. This device is designed to offer high performance and reliability in various power management applications. It features ultralow gate charge (Qg) and gate-to-drain charge (Qgd), making it suitable for high-frequency switching applications. The MOSFET is packaged in a SON 5-mm × 6-mm plastic package, which is Pb-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS (Drain to Source Voltage) | VGS = 0V, IDS = 250μA | 30 | V |
| IDSS (Drain to Source Leakage Current) | VGS = 0V, VDS = 24V | 1 | μA |
| IGSS (Gate to Source Leakage Current) | VDS = 0V, VGS = 20V | 100 | nA |
| VGS(th) (Gate to Source Threshold Voltage) | VDS = VGS, IDS = 250μA | 1.3 | V |
| RDS(on) (Drain to Source On Resistance) | VGS = 10V | 2.4 | mΩ |
| Qg (Gate Charge Total) | VGS = 4.5V | 13.2 | nC |
| Qgd (Gate Charge Gate to Drain) | VGS = 4.5V | 3.5 | nC |
| ID (Maximum Drain Current) | 28 | A | |
| Tj (Maximum Junction Temperature) | 150 | °C | |
| tr (Rise Time) | VDS = 15V, VGS = 4.5V, IDS = 25A, RG = 2Ω | 17 | ns |
| tf (Fall Time) | VDS = 15V, VGS = 4.5V, IDS = 25A, RG = 2Ω | 7.9 | ns |
| RθJC (Thermal Resistance Junction to Case) | 1 | °C/W | |
| RθJA (Thermal Resistance Junction to Ambient) | 49 | °C/W |
Key Features
- Ultralow Qg and Qgd: Low gate charge and gate-to-drain charge, enhancing high-frequency switching performance.
- Low Thermal Resistance: Efficient heat dissipation, ensuring reliable operation in demanding environments.
- Avalanche Rated: Capable of withstanding high-energy pulses, making it robust for various applications.
- Pb Free Terminal Plating, RoHS Compliant, and Halogen Free: Environmentally friendly and compliant with regulatory standards.
- SON 5-mm × 6-mm Plastic Package: Compact and efficient packaging suitable for space-constrained designs.
Applications
- Point-of-Load Synchronous Buck Converters: Optimized for synchronous FET applications in power management systems.
- Networking, Telecom, and Computing Systems: Suitable for high-performance power management in networking, telecom, and computing systems.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the CSD17501Q5A?
The maximum drain-to-source voltage (VDS) is 30 V.
- What is the typical drain-to-source on-resistance (RDS(on)) of the CSD17501Q5A?
The typical drain-to-source on-resistance (RDS(on)) is 2.4 mΩ at VGS = 10V.
- What is the maximum drain current (ID) of the CSD17501Q5A?
The maximum drain current (ID) is 28 A.
- What is the maximum junction temperature (Tj) of the CSD17501Q5A?
The maximum junction temperature (Tj) is 150 °C.
- What is the rise time (tr) of the CSD17501Q5A?
The rise time (tr) is 17 ns under specified test conditions.
- What is the fall time (tf) of the CSD17501Q5A?
The fall time (tf) is 7.9 ns under specified test conditions.
- Is the CSD17501Q5A RoHS compliant and halogen-free?
Yes, the CSD17501Q5A is RoHS compliant and halogen-free.
- What is the thermal resistance junction to case (RθJC) of the CSD17501Q5A?
The thermal resistance junction to case (RθJC) is 1 °C/W.
- What is the thermal resistance junction to ambient (RθJA) of the CSD17501Q5A?
The thermal resistance junction to ambient (RθJA) is 49 °C/W.
- In which applications is the CSD17501Q5A commonly used?
The CSD17501Q5A is commonly used in point-of-load synchronous buck converters and in networking, telecom, and computing systems.
